TLP181_07 TOSHIBA [Toshiba Semiconductor], TLP181_07 Datasheet

no-image

TLP181_07

Manufacturer Part Number
TLP181_07
Description
Photocoupler GaAs Ired & Photo−Transistor
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Office Machine
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP181 is a small outline coupler,
suitable for surface mount assembly.
TLP181 consist of a photo transistor optically coupled to a gallium
arsenide infrared emitting diode.
Collector−emitter voltage: 80V (min.)
Current transfer ratio: 50% (min.)
Isolation voltage: 3750Vrms (min.)
UL recognized: UL1577,
Option (V4) type
BSI approved: BS EN60065:2002, certificate no.8285
Rank GB: 100% (min.)
VDE approved: EN 60747-5-2 satisfied
Maximum operating insulation voltage: 565V
Highest permissible over voltage: 6000V
BS EN60950-1:2002, certificate no.8286
file no. E67349
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP181
PK
PK
1
Pin Configuration
1
3
1: Anode
3: Cathode
4: Emitter
6: Collector
Weight: 0.09 g
TOSHIBA
6
4
11−4C1
2007-10-01
(top view)
TLP181
Unit in mm

Related parts for TLP181_07

TLP181_07 Summary of contents

Page 1

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor Office Machine Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA mini flat coupler TLP181 is a small outline coupler, suitable for surface mount assembly. TLP181 consist of a photo transistor optically coupled to ...

Page 2

Current Transfer Ratio Classification Type *1 (None) Rank Y TLP181 Rank GR Rank BL Rank GB *1: EX, Rank GB: TLP181 (GB) (Note) Application, type name for certification test, please use standard product type name TLP181 (GB): TLP181 ...

Page 3

Absolute Maximum Ratings Characteristic Forward current Forward current detating Pulse forward current (100μs pulse, 100pps) Reverse voltage Junction temperature Collector−emitter voltage Emitter−collector voltage Collector current Collector power dissipation (1 Circuit) Collector power dissipation derating (1 Circuit Ta ≥ 25°C) Junction ...

Page 4

Individual Electrical Characteristics Characteristic Forward voltage Reverse current Capacitance Collector−emitter breakdown voltage Emitter−collector breakdown voltage Collector dark current Capacitance (collector to emitter) Coupled Electrical Characteristics Characteristic Current transfer ratio Saturated CTR Collector−emitter saturation voltage Off−state collector current Isolation Characteristics Characteristic ...

Page 5

Switching Characteristics Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Fig. 1 Switching time test circuit I F (Ta = 25°C) Symbol Test Condition ...

Page 6

I – 100 − Ambient temperature Ta (°C) I – 3000 Pulse width ≤ 100μ 25°C 1000 500 300 100 ...

Page 7

I – 25°C 50mA 40 30mA 20mA 15mA 30 10mA P C (MAX 5mA Collector-emitter voltage – ...

Page 8

V – Ta CE(sat) 0. 1mA 0.2mA 0.20 0.16 0.12 0.08 0.04 0 −40 − Ambient temperature Ta (°C) Switching Time – 1000 Ta = 25° ...

Page 9

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

Related keywords