M12L16161A-5T ESMT [Elite Semiconductor Memory Technology Inc.], M12L16161A-5T Datasheet - Page 3

• Manufacturer Part Number: M12L16161A-5T
• Description: 512K x 16Bit x 2Banks Synchronous DRAM
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

ABSOLUTE MAXIMUM RATINGS
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA=0 to 70
Note : 1.V
CAPACITANCE
Elite Semiconductor Memory Technology Inc.
V
N.C/RFU
Voltage on any pin relative to V
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
RAS , CAS , WE , CS , CKE, LDQM,
DDQ
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
/V
2.V
3.Any input 0V
4.Dout is disabled, 0V
SSQ
Parameter
IH
IL
DD
Parameter
(min) = -1.5V AC for pulse width
(max) = 4.6V AC for pulse width
DQ0 ~DQ15
ADDRESS
Data Output Power/Ground
No Connection/
Reserved for Future Use
supply relative to V
CLOCK
UDQM
Pin
(V
V
DD
IN
= 3.3V, T
SS
V
V
DD
OUT
V
SS
Symbol
DD
+ 0.3V, all other pins are not under test = 0V.
V
V
V
V
A
I
I
,V
OL
OH
IL
OL
IH
IL
= 25
DDQ
V
V
DD
V
Symbol
DD
Isolated power supply and ground for the output buffers to provide improved
noise immunity.
This pin is recommended to be left No Connection on the device.
IN,
C
T
.
I
P
STG
,V
V
OS
, f = 1MHz)
Symbol
D
10ns acceptable.
10ns acceptable.
C
C
OUT
C
DDQ
C
ADD
OUT
CLK
IN
Min
-0.3
3.0
2.0
2.4
-5
-5
-
P.3
Typ
-55 ~ + 150
3.3
3.0
Min
-1.0 ~ 4.6
-1.0 ~ 4.6
0
-
-
-
-
2.5
2.5
2.5
4.0
Value
50
1
C
)
V
DD
Max
Publication Date : Jan. 2000
3.6
0.8
0.4
5
5
-
+0.3
Max
4.0
5.0
5.0
6.5
M12L16161A
Unit
uA
uA
V
V
V
V
V
Revision : 1.3u
Unit
MA
W
V
V
C
I
I
OH
OL
Unit
pF
pF
pF
pF
Note
=-2mA
= 2mA
1
2
3
4