K9F6408U0M-TIB0 Samsung semiconductor, K9F6408U0M-TIB0 Datasheet - Page 6

• Manufacturer Part Number: K9F6408U0M-TIB0
• Description: 8M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F6408U0M-TCB0:T
NOTE :
1. V
DC AND OPERATING CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
K9F6408U0M-TCB0, K9F6408U0M-TIB0
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Output Current
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Operating
Supply Voltage
Supply Voltage
Supply Voltage
Maximum DC voltage on input/output pins is V
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Current
CC
and V
CC
Parameter
Q pins are separated each other.
Sequential Read
Program
Erase
Parameter
Parameter
K9F6408U0M-TCB0
K9F6408U0M-TIB0
SS
Symbol
V
Symbol
I
OL
CC
V
V
CC
I
I
I
I
I
V
V
V
CC
CC
CC
SB
SB
I
V
CC
SS
(R/B)
I
LO
OH
Q
LI
OL
Q+0.3V which, during transitions, may overshoot to V
IH
IL
1
2
1
2
3
*1
tcycle=50ns, CE=V
CE=V
CE=V
V
V
I/O pins
Except I/O pins
I
I
V
OH
OL
IN
OUT
OL
=2.1mA
=0 to 3.6V
=-400 A
=0.4V
A
=0 to 3.6V
IH
CC
=0 to 70 C, K9F6408U0M-TIB0:T
Symbol
, WP=SE=0V/V
-0.2, WP=SE=0V/V
V
Test Conditions
T
T
V
Min
(Recommended operating conditions otherwise noted.)
V
I
2.7
2.7
CC
BIAS
STG
OS
0
CC
IN
Q
6
-
-
-
IL
, I
OUT
CC
=0mA
CC
Typ.
3.3
0
-
-0.6 to + 6.0
-0.6 to + 4.6
-0.6 to + 6.0
-10 to + 125
-40 to + 125
-65 to + 150
Rating
5
CC
Min
-0.3
2.0
2.0
2.4
8
-
-
-
-
-
-
-
-
+2.0V for periods <20ns.
A
FLASH MEMORY
=-40 to 85 C)
Max
3.6
5.5
Typ
0
10
10
10
10
10
-
-
-
-
-
-
-
-
V
V
CC
CC
Max
0.8
0.4
20
20
20
50
Q+0.3
1
10
10
-
-
+0.3
Unit
mA
V
V
V
C
C
Unit
V
V
V
Unit
mA
mA
V
A