SBR13003A WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd], SBR13003A Datasheet - Page 2

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SBR13003A

Manufacturer Part Number
SBR13003A
Description
High Voltage Fast -Switching NPN Power Transistor
Manufacturer
WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Datasheet
Electrical Characteristics
Note :
V
V
V
I
h
ton
ts
tf
ts
tf
ts
tf
Symbol
CBO
FE
CEO(sus)
CE(sat)
BE(sat)
Pulse test :Pulse width 300,Duty cycle 2%
Collector -Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base -Emitter Saturation Voltage
Collector-Base Cutoff Current
(Vbe=-1.5V)
DC Current Gain
Resistive
Resistive
Resistive
Turn-on Time
Storage Time
Fall Time
Inductive
Inductive
Inductive
Storage Time
Fall Time
Inductive
Inductive
Inductive
Storage Time
Fall Time
Resistive Load
Inductive Load
Inductive Load
Load
Load
Load
Load
Load
Load
Load
Load
Load
Parameter
(Tc=25℃ unless otherwise noted)
Steady,
Steady,
Steady,
Steady, keep
keep
keep
keep you
you
you
you advance
Ic=10mA,Ib=0
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Ic=1.5A,Ib=0.5A
Ic=0.5A,Ib=0.1A
Ic=1.0A,Ib=0.25A
Vcb=700V
Vcb=700V,Tc=100℃
Vce=2V,Ic=0.5A
Vce=2V,Ic=1.0A
V
I
T
V
I
L=0.35mH,Vclamp=
300V
V
I
L=0.35mH,Vclamp=
300V
Test Conditions
B1
B1
B1
P
CC
CC
CC
=0.2A,I
=25 µs
=0.2A,I
=0.2A,I
=125V,Ic=1A
=15V,Ic=1A
=15V,Ic=1A
advance
advance
advance
B2
B2
B2
Tc=100℃
=-0.5A
=-0.5A
=-0.5A
Min
400
10
5
-
-
-
-
-
-
-
-
SBR13003A
SBR13003A
SBR13003A
SBR13003A
Value
Typ
0.15
0.12
0.15
0.2
1.5
1.2
2.4
-
-
-
-
-
-
Max
0.3
0.5
1.0
1.0
1.2
1.0
5.0
1.0
3.0
0.4
4.0
0.3
5.0
0.4
30
25
-
Units
mA
µs
µs
µs
V
V
V
2/5

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