2SC1815-GR(F) Toshiba, 2SC1815-GR(F) Datasheet
2SC1815-GR(F)
Manufacturer Part Number
2SC1815-GR(F)
Description
Semi, Discrete, Transistor
Manufacturer
Toshiba
Datasheet
1.2SC1815-GRF.pdf
(1 pages)
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
·
·
·
·
Maximum Ratings
Electrical Characteristics
High voltage and high current: V
Excellent h
Low noise: NF = 1dB (typ.) at f = 1 kHz
Complementary to 2SA1015 (O, Y, GR class)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
Noise figure
Note: h
FE
Characteristics
Characteristics
classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
FE
linearity : h
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
(Ta = = = = 25°C)
: h
at V
= 0.95 (typ.)
FE (2)
FE
CE
(I
C
I
(Ta = = = = 25°C)
= 100 (typ.)
= 6 V, I
C
= 0.1 mA)/h
CEO
= 150 mA (max)
V
V
Symbol
Symbol
h
h
V
V
V
CE (sat)
BE (sat)
I
I
= 50 V (min),
T
FE (1)
FE (2)
CBO
C
EBO
r
P
NF
CBO
CEO
EBO
I
I
T
f
bb’
C
stg
C
B
T
ob
C
2SC1815
j
(Note)
= 150 mA
FE
V
V
V
V
I
I
V
V
V
f = 30 MHz
V
f = 1 kHz, R
(I
C
C
CB
EB
CE
CE
CE
CB
CE
CE
C
= 100 mA, I
= 100 mA, I
-55~125
= 2 mA)
Rating
= 5 V, I
= 60 V, I
= 6 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 6 V, I
150
400
125
60
50
50
5
1
G
C
C
C
C
Test Condition
E
C
E
E
= 10 kW
= 0
= 2 mA
= 150 mA
= 0.1 mA
B
B
= 0
= 1 mA
= 0, f = 1 MHz
= -1 mA
= 10 mA
= 10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.21 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
¾
¾
70
25
¾
¾
80
¾
¾
¾
Typ.
100
0.1
2.0
1.0
50
¾
¾
¾
¾
¾
2-5F1B
TO-92
SC-43
2SC1815
0.25
Max
700
0.1
0.1
1.0
3.5
10
¾
¾
¾
Unit: mm
MHz
Unit
mA
mA
pF
dB
W
V
V
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