2SC1815-Y(TE2,F,T) Toshiba, 2SC1815-Y(TE2,F,T) Datasheet
2SC1815-Y(TE2,F,T)
Manufacturer Part Number
2SC1815-Y(TE2,F,T)
Description
Transistors Bipolar - BJT x34 Small Signal Transistor
Manufacturer
Toshiba
Datasheet
1.2SC1815-YTE2FT.pdf
(4 pages)
Specifications of 2SC1815-Y(TE2,F,T)
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.15 A
Gain Bandwidth Product Ft
80 MHz
Dc Collector/base Gain Hfe Min
120 at 2 mA at 6 V
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Package / Case
TO-92
Maximum Power Dissipation
400 mW
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
3000
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
·
·
·
·
Maximum Ratings
Electrical Characteristics
High voltage and high current: V
Excellent h
Low noise: NF = 1dB (typ.) at f = 1 kHz
Complementary to 2SA1015 (O, Y, GR class)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
Noise figure
Note: h
FE
Characteristics
Characteristics
classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
FE
linearity : h
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
(Ta = = = = 25°C)
: h
at V
= 0.95 (typ.)
FE (2)
FE
CE
(I
C
I
(Ta = = = = 25°C)
= 100 (typ.)
= 6 V, I
C
= 0.1 mA)/h
CEO
= 150 mA (max)
V
V
Symbol
Symbol
h
h
V
V
V
CE (sat)
BE (sat)
I
I
= 50 V (min),
T
FE (1)
FE (2)
CBO
C
EBO
r
P
NF
CBO
CEO
EBO
I
I
T
f
bb’
C
stg
C
B
T
ob
C
2SC1815
j
(Note)
= 150 mA
FE
V
V
V
V
I
I
V
V
V
f = 30 MHz
V
f = 1 kHz, R
(I
C
C
CB
EB
CE
CE
CE
CB
CE
CE
C
= 100 mA, I
= 100 mA, I
-55~125
= 2 mA)
Rating
= 5 V, I
= 60 V, I
= 6 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 6 V, I
150
400
125
60
50
50
5
1
G
C
C
C
C
Test Condition
E
C
E
E
= 10 kW
= 0
= 2 mA
= 150 mA
= 0.1 mA
B
B
= 0
= 1 mA
= 0, f = 1 MHz
= -1 mA
= 10 mA
= 10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.21 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
¾
¾
70
25
¾
¾
80
¾
¾
¾
Typ.
100
0.1
2.0
1.0
50
¾
¾
¾
¾
¾
2-5F1B
TO-92
SC-43
2003-03-27
2SC1815
0.25
Max
700
0.1
0.1
1.0
3.5
10
¾
¾
¾
Unit: mm
MHz
Unit
mA
mA
pF
dB
W
V
V
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2SC1815-Y(TE2,F,T) Summary of contents
Page 1
... MHz bb’ MHz = 0 kHz 2SC1815 Unit V V JEDEC TO-92 V JEITA SC- TOSHIBA 2-5F1B mW Weight: 0.21 g (typ.) °C °C Min Typ. ¾ ¾ ¾ ¾ ¾ 70 ...
Page 2
... 2 2SC1815 2003-03-27 ...
Page 3
... 3 2SC1815 2003-03-27 ...
Page 4
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 2SC1815 000707EAA 2003-03-27 ...