MX29LV320ETTI-70G Macronix, MX29LV320ETTI-70G Datasheet - Page 60

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MX29LV320ETTI-70G

Manufacturer Part Number
MX29LV320ETTI-70G
Description
MX29LV Series 3 V 32 Mb (4M x 8/2M x 16) 70 ns Parallel Flash - TSOP-48
Manufacturer
Macronix
Datasheet

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ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0V VCC. Programming specifica-
2. Maximum values are measured at VCC = 3.0 V, worst case temperature. Maximum values are valid up to and
3. Erase/Program cycles comply with JEDEC JESD-47 & 22-A117 standard.
DATA RETENTION
LATCH-UP CHARACTERISTICS
TSOP PIN CAPACITANCE
P/N:PM1575
PARAMETER
Chip Erase Time
Sector Erase Time
Erase/Program Cycles
Chip Programming Time
Accelerated Byte/Word Program Time
Word Program Time
Byte Programming Time
Input voltage difference with GND on all pins except I/O pins
Input voltage difference with GND on all I/O pins
Vcc Current
All pins included except Vcc. Test conditions: Vcc = 3.0V, one pin per testing
Parameter Symbol Parameter Description
tions assume checkboard data pattern.
including 100,000 program/erase cycles.
COUT
PARAMETER
Data retention
CIN2
CIN
Control Pin Capacitance
Output Capacitance
Input Capacitance
Byte Mode
Word Mode
Condition
55˚C
60
MX29LV320E T/B
MIN.
Test Set
VOUT=0
VIN=0
VIN=0
Min.
20
LIMITS
100,000
TYP.
0.7
35
36
24
11
7
9
TYP
7.5
8.5
6
Max.
-100mA
-1.0V
-1.0V
MIN.
MAX.
108
210
360
300
MAX
50
72
7.5
2
12
9
REV. 1.2, MAY 23, 2011
1.5 x Vcc
years
UNIT
+100mA
UNITS
Cycles
10.5V
MAX.
UNIT
sec
sec
sec
sec
us
us
us
pF
pF
pF

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