LCMXO2280E-5BN256C Lattice, LCMXO2280E-5BN256C Datasheet - Page 27

• Manufacturer Part Number: LCMXO2280E-5BN256C
• Description: CPLD - Complex Programmable Logic Devices 2280 LUTs 211 I/O 1.2V -5 SPD
• Manufacturer: Lattice

Specifications of LCMXO2280E-5BN256C

• Rohs: yes
• Memory Type: SRAM
• Number Of Macrocells: 1140
• Delay Time: 3.6 ns
• Number Of Programmable I/os: 211
• Operating Supply Voltage: 1.2 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: 0 C
• Package / Case: CABGA
• Mounting Style: SMD/SMT
• Factory Pack Quantity: 595
• Supply Current: 20 mA
• Supply Voltage - Max: 1.26 V
• Supply Voltage - Min: 1.14 V

5.0 MachXO2 Process Reliability Wafer Level Review
Several key fabrication process related parameters have been identified by the foundry that would affect the
Reliability of the End-Product. These parameters are tested during the Development Phase of the Technology.
Passing data (a 10yr lifetime at the reliability junction temperature) must be obtained for three lots minimum for
each parameter before release to production. Normal operating conditions are defined in the Electrical Design
Rules (EDR). These parameters are:
Hot Carrier Immunity (HCI): Effect is a reduction in transistor Idsat. Worst case is low temperature.
Time Dependent Dielectric Breakdown (TDDB): Transistor and capacitor oxide shorts or leakage.
Negative Bias Temperature Instability (NBTI): Symptom is a shift in Vth (also a reduction in Idsat).
Electromigration Lifetime (EML): Symptom is opens within, or shorts between, metal conductors.
Stress Migration (SM): Symptom is a void (open) in a metal Via due to microvoid coalescence.
Table 5.1 – Wafer Level Reliability (WLR) Results
HCI
TDDB
NBTI
EML
SM
Note: Reliability life times are based on listed temperature and use conditions. A Detailed WLR report is available upon request. Lattice
Semiconductor Corporation document #73-106883.
Max Area
0.1% TTF
0.1% TTF
delta Vth
Vgstress
delta Ids
Celsius
Celsius
Celsius
Celsius
Celsius
delta R
delta R
Device
Device
Device
Device
Device
Jmax
TTF
TTF
TTF
Vds
Vg
Vg
3 lots>34yr DC
3 lots>2.5e5 yr 3 lots>1.4e3 yr
3 lots>5.8e5 yr 3 lots>4.2e3 yr
3 lots>2400 yr
3 lots>380 yr
Intermediate
Intermediate
6.65E+05
2.2 cm^2
+100%
-10%
50mv
-1.26
Vd/2
LVN
1.26
LVN
1.26
+5%
LVP
100
100
100
100
25
3 lots>328 yr
Semi-Global
Semi-Global
3 lots>77 yr
3 lots>71yr
6.65E+05
22 cm^2
+100%
100mv
-3.465
-10%
-1.26
-1.26
MVP
+5%
LVP
LVP
100
100
100
100
Vd
25
3 lots>20yr AC 3 lots>684yr
3 lots>1.1e4 yr
3 lots>22 yr
3 lots>25yr
6.65E+05
1 cm^2
+100%
Global
Global
3.465
3.465
-10%
MVN
MVN
Vd/2
+5%
100
100
100
25
27
3 lots>390 yr 3 lots>1.2e3 yr 3 lots>20 yr 3 lots>229yr 3 lots>6690yr
3 lots>70yr
2.85E+05
2.5 cm^2
Top Al
-3.465
-3.465
-10%
MVP
MVP
+5%
100
100
Vd
25
>3.5e6 s DC*
5e-4 cm^2
Lattice Semiconductor Corporation Doc. #25-106923 Rev. F
3 lots
-10%
HVN
HVN
Vd/2
5.25
5.25
100
25
INDEX Return
>1e9 s DC*
5e-4 cm^2 L/S=100nm
-10%
-5.25
3 lots
-5.25
HVP
HVP
100
Vd
25
Intermed.
3.465
IMD
100
Semi-Global
L/S=200nm
3.465
IMD
100