M95512-RMB6TG STMicroelectronics, M95512-RMB6TG Datasheet - Page 37

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M95512-RMB6TG

Manufacturer Part Number
M95512-RMB6TG
Description
EEPROM 512Kbit Serial SPI 20MHz Clock EEPROM
Manufacturer
STMicroelectronics
Datasheet

Specifications of M95512-RMB6TG

Product Category
EEPROM
Rohs
yes

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0
M95512-W M95512-R M95512-DR M95512-DF
Table 18.
1. If the application uses the M95512-DF device with 2.5 V  V
2. Characterized only, not tested in production.
3. 1 µA for devices identified from date code 301 (year 2013, W01), 3 µA for previous devices
Symbol
I
CC0
I
V
V
V
I
I
instead of the above table.
CC1
V
I
CC
LO
OH
OL
LI
IH
IL
(2)
Input leakage current
Output leakage current
Supply current (Read)
Supply current (Write)
Supply current (Standby
Power mode)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
DC characteristics (M95512-DF products, device grade 6)
Parameter
V
S = V
C = 0.1 V
Q = open
During t
S = V
I
I
OL
OH
IN
Test conditions in addition to those
= 0.15 mA, V
= V
= –0.1 mA, V
CC
CC
SS
W
, voltage applied on Q = V
, V
Doc ID 11124 Rev 20
CC
, S = V
or V
CC
defined in
/0.9 V
= 1.7 V, V
CC
CC
CC
CC
CC
CC
, 1.7 V < V
= 1.7 V
= 1.7 V
at 5 MHz, V
< 5.5 V and -40 °C < TA < +85 °C, please refer to
Table 10
IN
= V
CC
SS
(1)
or V
< 2.5 V
CC
SS
= 1.7 V,
CC
or V
CC
0.7 V
0.8 V
–0.45
Min
DC and AC parameters
CC
CC
0.3 V
V
Max
CC
1
± 2
± 2
2.5
1.5
0.3
(3)
+1
CC
Table 16
Unit
mA
mA
37/51
µA
µA
µA
V
V
V
V

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