NCN4555MNG ON Semiconductor, NCN4555MNG Datasheet - Page 9

• Manufacturer Part Number: NCN4555MNG
• Description: IC LEVEL SHIFTER SIM CARD 16-QFN
• Manufacturer: ON Semiconductor

Specifications of NCN4555MNG

• Logic Function: Level Shifter
• Input Type: Logic
• Output Type: Logic
• Differential - Input:output: No/No
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -25°C ~ 85°C
• Package / Case: 16-TFQFN Exposed Pad
• Supply Voltage: 1.8 V ~ 5.5 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Number Of Channels: -
• Data Rate: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

the accelerator operates. During the first 200 ns (typical),
the slope of the rise time is solely a function of the pullup
resistor associated with the stray capacitance. During this
period, the PMOS devices are not activated since the input
voltage is below their V
crosses the V
providing a low impedance to charge the capacitance, thus
increasing the rise time as depicted in Figure 10. The same
mechanism applies for the opposite side of the line to make
sure the system is optimum.
INPUT SCHMITT TRIGGERS
Figure 3) have built−in Schmitt trigger circuits to prevent
the NCN4555 against uncontrolled operation. The typical
dynamic characteristics of the related pins are depicted
Figure 11.
voltage is above 0.7 x V
voltage is below 0.4 V.
SHUTDOWN OPERATING
application it is possible to put the NCN4555 in a shutdown
mode by setting Low the pin STOP. On the other hand the
device enters automatically in a shutdown mode when V
becomes lower than 1.1 V typically.
The typical waveform provided in Figure 10 shows how
All the Logic input pins (excepted I/O and SIM_I/O, See
The output signal is guaranteed to go High when the input
In order to save power or for other purpose required by the
Figure 10. SIM_IO Typical Rise and Fall Times with
(33 pF Capacitor Connected on the Board)
gsth
Stray Capacitance > 30 pF
, the opposite one shot is activated,
DD
gs
, and will go Low when the input
threshold. When the input slope
http://onsemi.com
DD
9
ESD PROTECTION
voltage protection in excess of 7 kV for all the SIM pins
(SIM_IO, SIM_CLK, SIM_RST, SIM_V
the other pins (microcontroller side) sustain at least 2 kV.
These values are guaranteed for the device in its full integrity
without considering the external capacitors added to the
circuit for a proper operating. Consequently in the operating
conditions it is able to sustain much more than 7 kV on its
SIM pins making it perfectly protected against electrostatic
discharge well over the HBM ESD voltages required by the
ISO7816 standard (4 kV).
PRINTED CIRCUIT BOARD LAYOUT
and efficient operating of the device in its mobile or portable
environment and fully exploit its performance.
possible to the device pins (SIM_V
order to reduce as much as possible parasitic behaviors
(ripple
ceramic capacitors.
connected to the ground as well as the unconnected pins
(NC). A relatively large ground plane is recommended.
implementation in an evaluation environment.
The NCN4555 SIM interface features an HBM ESD
Careful layout routing will be applied to achieve a good
The bypass capacitors have to be connected as close as
The exposed pad of the QFN−16 package will be
Figures 12 and 13 shows an example of PCB device
Figure 11. Typical Schmitt Trigger Characteristics
OFF
V
ON
DD
OUTPUT
and
noise).
0.2 x V
or 0.4 V
It
DD
is
recommended
0.7 x V
CC
, V
CC
DD
DD
and GND). All
or V
to
INPUT
BAT
) in
use