AT28BV256-20TU Atmel, AT28BV256-20TU Datasheet

IC EEPROM 256KBIT 200NS 28TSOP

AT28BV256-20TU

Manufacturer Part Number
AT28BV256-20TU
Description
IC EEPROM 256KBIT 200NS 28TSOP
Manufacturer
Atmel
Datasheets

Specifications of AT28BV256-20TU

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
256K (32K x 8)
Speed
200ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-TSOP
Capacitance, Input
4 pF
Capacitance, Output
8 pF
Current, Input, Leakage
10 μA
Current, Operating
15 mA
Current, Output, Leakage
10
Data Retention
10 yrs.
Density
256K
Organization
32K×8
Package Type
TSOP
Power Dissipation
54 mW
Temperature, Operating
-40 to +85 °C
Time, Access
200 ns
Time, Address Hold
50
Voltage, Input, High
2 V
Voltage, Input, Low
0.6 V
Voltage, Output, High
2 V
Voltage, Output, Low
0.3 V
Voltage, Supply
2.7 to 3.6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Features
1. Description
The AT28BV256 is a high-performance electrically erasable and programmable read-
only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access
times to 200 ns with power dissipation of just 54 mW. When the device is deselected,
the CMOS standby current is less than 200 µA.
The AT28BV256 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by Data polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28BV256 has additional features to ensure high quality and manufactura-
bility. The device utilizes internal error correction for extended endurance and
improved data retention characteristics. An optional software data protection mecha-
nism is available to guard against inadvertent writes. The device also includes an
extra 64 bytes of EEPROM for device identification or tracking.
Single 2.7V - 3.6V Supply
Fast Read Access Time – 200 ns
Automatic Page Write Operation
Fast Write Cycle Times
Low Power Dissipation
Hardware and Software Data Protection
Data Polling for End of Write Detection
High Reliability CMOS Technology
JEDEC Approved Byte-wide Pinout
Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
– Page Write Cycle Time: 10 ms Maximum
– 1- to 64-byte Page Write Operation
– 15 mA Active Current
– 20 µA CMOS Standby Current
– Endurance: 10,000 Cycles
– Data Retention: 10 Years
256K (32K x 8)
Battery-Voltage
Parallel
EEPROMs
AT28BV256
0273J–PEEPR–10/06

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AT28BV256-20TU Summary of contents

Page 1

... When the device is deselected, the CMOS standby current is less than 200 µA. The AT28BV256 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing bytes simultaneously ...

Page 2

... This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect + 0.6V device reliability CC AT28BV256 3 ...

Page 3

... Input High Voltage IH V Output Low Voltage OL V Output High Voltage OH AT28BV256 ( ( Condition I 0. MHz OUT -100 µA OH AT28BV256-20 -40°C - 85°C 2.7V - 3. OUT High High Z V High Z IL Min Max Units 10 µA 10 µA 50 µ 0.6 V 2.0 V 0.3 V 2.0 V ...

Page 4

... ACC specified from whichever occurs first ( This parameter is characterized and is not 100% tested. (1)(2)(3)( ACC - t after the address transition without impact on t ACC after the falling edge of CE without impact pF). L AT28BV256 AT28BV256-20 Min Max Units 200 ns 200 ACC after an address change ...

Page 5

... Input Test Waveforms and Measurement Level t R 12. Output Test Load 13. Pin Capacitance ( MHz 25°C Symbol Typ OUT Note: 1. This parameter is characterized and is not 100% tested. AT28BV256 < Max 6 12 Units Conditions OUT ...

Page 6

... Chip Select Hold Time CH t Write Pulse Width ( Data Set-up Time Data, OE Hold Time DH OEH t Time to Data Valid DV Note Restriction. 15. AC Write Waveforms 15.1 WE Controlled 15.2 CE Controlled t OES t OEH OES OEH AT28BV256 Min Max 200 WPH WPH t DH Units ...

Page 7

... A0 - A14 must conform to the addressing sequence for the first three bytes as shown above through A14 must specify the same page address during each high to low transition of WE (or CE) after the software code has been entered must be high only when WE and CE are both low. AT28BV256 10 Min 0 ...

Page 8

... Wide, Plastic Gull Wing Small Outline (SOIC) 28T 28-lead, Plastic Thin Small Outline Package (TSOP) 0273J–PEEPR–10/06 Ordering Code AT28BV256-20JI AT28BV256-20PI AT28BV256-20SI AT28BV256-20TI Ordering Code AT28BV256-20JU AT28BV256-20TU AT28BV256-20SU AT28BV256-20PU Package and Temperature Combinations JI, PI, SI, TI, TU, JU, SU, PU Package Type AT28BV256 Package Operation Range 32J 28P6 ...

Page 9

... E is 0.15 mm per side and 0.25 mm per side. 3. Lead coplanarity is 0.10 mm maximum. 2325 Orchard Parkway San Jose, CA 95131 R PIN SEATING PLANE A1 TITLE 28T, 28-lead (8 x 13.4 mm) Plastic Thin Small Outline Package, Type I (TSOP) AT28BV256 0º ~ 5º GAGE PLANE COMMON DIMENSIONS (Unit of Measure = mm) MIN NOM MAX SYMBOL A – – ...

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