6116LA150DB IDT, 6116LA150DB Datasheet - Page 2

• Manufacturer Part Number: 6116LA150DB
• Description: SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
• Manufacturer: IDT

Specifications of 6116LA150DB

• Part # Aliases: IDT6116LA150DB

Pin Configurations
Pin Description
Truth Table
NOTE:
1. H = V
Standby
Read
Read
Write
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
IH
Mode
, L = V
I/O
GND
A
I/O
I/O
I/O
Name
0
GND
0
V
WE
CS
OE
A
A
A
A
A
A
A
A
- A
CC
- I/O
IL
6
5
4
7
3
2
1
0
0
1
2
, X = Don't Care.
10
7
(1)
10
1
2
3
4
5
6
7
8
9
11
12
Top View
DIP/SOIC
CS
H
L
L
L
SO24-2
P24-1
D24-2
D24-1
OE
X
H
X
L
Data Input/Output
Address Inputs
Output Enable
Write Enable
24
23
22
21
20
19
18
17
16
15
14
13
Description
Chip Select
Ground
Power
3089 drw 02
WE
X
H
H
L
V
A
A
A
WE
OE
CS
I/O
I/O
I/O
I/O
I/O
CC
10
8
9
7
6
5
4
3
DATA
DATA
High-Z
High-Z
I/O
3089 tbl 02
3089 tbl 01
OUT
IN
2
Capacitance
NOTE:
1. This parameter is determined by device characterization, but is not production
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
2. V
Absolute Maximum Ratings
C
C
P
I
V
T
T
T
OUT
A
BIAS
STG
IN
I/O
T
Symbol
TERM
Symbol
tested.
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
TERM
(2)
Military, Commercial, and Industrial Temperature Ranges
must not exceed V
Input Capacitance
I/O Capacitance
Operating
Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Terminal Voltage
with Respect
to GND
Temperature
Temperature
Parameter
Rating
CC
(T
(1)
+0.5V.
A
= +25°C, f = 1.0 MH
-0.5 to +7.0
-55 to +125
-55 to +125
0 to +70
Com'l.
1.0
Conditions
V
50
V
OUT
IN
= 0V
= 0V
-0.5 to +7.0
-55 to +125
-65 to +135
-65 to +150
Mil.
(1)
1.0
50
Max.
8
8
Z
)
3089 tbl 04
3089 tbl 03
Unit
Unit
pF
pF
mA
o
o
o
W
V
C
C
C