6116LA150DB IDT, 6116LA150DB Datasheet - Page 4

• Manufacturer Part Number: 6116LA150DB
• Description: SRAM 16K Asynch. 2Kx8 HS, L-Pwr, SRAM
• Manufacturer: IDT

Specifications of 6116LA150DB

• Part # Aliases: IDT6116LA150DB

DC Electrical Characteristics
(V
NOTES:
1. All values are maximum guaranteed values.
2. f
Data Retention Characteristics Over All Temperature Ranges
(LA Version Only) (V
NOTES:
1. T
2. t
3. This parameter is guaranteed by device characterization, but is not production tested.
I
I
V
t
t
CCDR
y S
CDR
R
I
LI
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
DR
(3)
I
I
CC
I
I
C
C
I
S
m
MAX
RC
S
Symbol
A
2 C
(3)
1 C
1 B
B
b
= + 25°C
l o
= Read Cycle Time.
= 1/t
= 5.0V ± 10%, V
O
u C
O
y D
u C
O
S
u C
F
u S
e L
r o
V
V
C > V
V
V
l u
p
u
C
u
C
a t
C
C
S
RC
e v
e r r
p t
C
a n
e r r
p t
C
e r r
C
p p
C
V
r e
S l
d n
, only address inputs are toggling at f
N I
s t u
=
s t u
=
=
=
i t a
m
, ) l
, t n
, t n
t n
y l
y b
a t
> V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Input Leakage Current
V
M
c i
M
M
M
g n
a P
d n
H I
C > V
T (
u C
O
O
C < V
C < V
CC
x a
x a
x a
a
o P
,
O
S
L T
p
p
, . x
S
S
y b
a r
H
o P
e r r
O
f , .
p
f , .
f , .
n e
n e
C
w
for Data Retention
m
r e
u
,
L
w
r e
o P
t n
V
p t
v e
= f
e
i t a
=
f =
f =
N I
r e
H
s t u
r e t
C (
L I
0
L I
u S
w
C
g n
) l e
M
M
< V
,
,
,
0
u S
r e
M
A
A
p p
O
X
X
O
p p
) 2 (
p
) 2 (
C L
S
y l
Parameter
n e
y l
LC
LC
P
o
S
S
S
S
A L
A L
A L
A L
= 0.2V, V
w
A
A
A
A
r e
= 0.2V, V
6
6
M
1 1
1 1
l i
1
S 6
L 6
1
0
MAX
0 9
5 8
5 3
0 3
0 1
O
5 1
5 0
9 .
A
A
n
, f = 0 means address inputs are not changing.
HC
5 3
5 3
y l
HC
CS > V
V
IN
= V
> V
= V
6
6
Test Condition
M
1 1
1 1
(1)
l i
CC
HC
HC
S 6
1
L 6
0
0 9
5 8
5 9
5 2
0 2
0 1
O
0 0
9 .
CC
(continued)
A
A
n
or < V
____
5 4
y l
5 4
– 0.2V)
- 0.2V)
MIL.
COM'L.
LC
6
6
M
1 1
1 1
l i
4
S 6
1
L 6
0
0 9
5 8
0 9
5 2
0 2
0 1
O
0 0
9 .
A
A
n
5 5
5 5
y l
Min.
t
RC
2.0
____
____
____
____
Military, Commercial, and Industrial Temperature Ranges
(2)
6
6
M
1 1
1 1
l i
S 6
1
L 6
0
0 9
5 8
0 9
5 2
0 2
0 1
O
0 0
9 .
A
A
n
0 7
0 7
y l
2.0V
____
0.5
0.5
____
____
0
6
V
6
Typ.
M
1 1
1 1
CC
l i
S 6
1
L 6
0
0 9
5 8
5 8
5 2
5 2
0 1
O
0 0
9 .
@
(1)
A
A
n
0 9
0 9
y l
3.0V
____
1.5
1.5
____
____
____
6
6
1 1
1 1
M
l i
S 6
L 6
1
0
0 9
5 8
5 8
5 2
5 1
0 1
0 0
O
9 .
1 A
1 A
n
2.0V
200
____
____
____
y l
20
0 2
0 2
2
V
Max.
CC
6
6
1 1
1 1
M
@
l i
S 6
L 6
0
0 9
5 8
0 9
5 8
5 2
5 1
0 1
3.0V
O
9 .
300
1 A
1 A
____
____
____
30
n
2
y l
0 5
0 5
0 3
3089 tbl 10
U
Unit
m
m
m
m
9 8
μA
μA
ns
ns
t i n
V
A
A
A
A
l b t
9 0