CY7C1021D-10VXI Cypress Semiconductor Corp, CY7C1021D-10VXI Datasheet - Page 5

• Manufacturer Part Number: CY7C1021D-10VXI
• Description: IC SRAM 1MBIT 10NS 44SOJ
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1021D-10VXI

• Memory Size: 1M (64K x 16)
• Package / Case: 44-SOJ
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 80 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 5 V
• Memory Configuration: 64K X 16
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: SOJ
• No. Of Pins: 44
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-1971-5; CY7C1021D-10VXI

Switching Characteristics
Notes
Document #: 38-05462 Rev. *H
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
t
6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified
7. t
8. At any given temperature and voltage condition, t
9. t
10. This parameter is guaranteed by design and is not tested.
11. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE/BLE LOW. CE, WE and BHE/BLE must be LOW to initiate a write,
power
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
DBE
LZBE
HZBE
WC
SCE
AW
HA
SA
PWE
SD
HD
LZWE
HZWE
BW
Parameter
I
the outputs enter a high impedance state.
and the transition of these signals can terminate the write. The input data setup and hold timing should be referenced to the leading edge of the signal that
terminates the write.
OL
POWER
HZOE
/I
[7]
OH
, t
HZBE
and 30-pF load capacitance.
gives the minimum amount of time that the power supply should be at typical V
, t
[11]
HZCE
, and t
V
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable to Data Valid
Byte Enable to Low Z
Byte Disable to High Z
Write Cycle Time
CE LOW to Write End
Address Setup to Write End
Address Hold from Write End
Address Setup to Write Start
WE Pulse Width
Data Setup to Write End
Data Hold from Write End
WE HIGH to Low Z
WE LOW to High Z
Byte Enable to End of Write
CC
(typical) to the first access
HZWE
are specified with a load capacitance of 5 pF as in (c) of
Description
[8]
[8]
(Over the Operating Range)
[8, 9]
[8]
[8, 9]
[8, 9]
HZCE
is less than t
LZCE
, t
HZOE
is less than t
[6]
Min
100
–10 (Industrial)
10
10
3
0
3
0
0
7
7
0
0
7
6
0
3
7
AC Test Loads and Waveforms [5]
CC
LZOE
values until the first memory access can be performed.
, and t
HZWE
Max
10
10
10
5
5
5
5
5
5
is less than t
LZWE
–12 (Automotive)
Min
100
12
12
10
10
10
10
3
0
3
0
0
0
0
7
0
3
for any given device.
on page 4. Transition is measured when
Max
12
12
12
6
6
6
6
6
6
CY7C1021D
Page 5 of 12
Unit
s
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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