CY7C1061DV33-10ZSXI Cypress Semiconductor Corp, CY7C1061DV33-10ZSXI Datasheet - Page 6

• Manufacturer Part Number: CY7C1061DV33-10ZSXI
• Description: IC SRAM 16MBIT 10NS 54TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1061DV33-10ZSXI

• Memory Size: 16M (1M x 16)
• Package / Case: 54-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 4.6 V
• Supply Voltage (min): 2 V
• Maximum Operating Current: 175 mA
• Organization: 1 M x 16
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Density: 16Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 20b
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Supply Current: 175mA
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 54
• Word Size: 16b
• Number Of Words: 1M
• Rohs Compliant: YES
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2960-5; CY7C1061DV33-10ZSXI

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ............................... –65 C to +150 C
Ambient Temperature with
Power Applied .......................................... –55 C to +125 C
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
DC Input Voltage
Current into Outputs (LOW)......................................... 20 mA
DC Electrical Characteristics
Over the Operating Range
Note
Document Number: 38-05476 Rev. *G
V
V
V
V
I
I
I
I
I
6. V
IX
OZ
CC
SB1
SB2
Parameter
OH
OL
IH
IL
IL
(min) = –2.0 V and V
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
Output leakage current
V
Automatic CE power down
current — TTL inputs
Automatic CE power down
current —CMOS inputs
[6]
CC
.................................. –0.5 V to V
[6]
operating supply current V
.............................. –0.5 V to V
CC
IH
Description
(max) = V
Relative to GND
CC
+ 2 V for pulse durations of less than 20 ns.
[6]
[6]
...–0.5 V to +4.6 V
V
–
–
GND < V
GND < V
Max V
V
Max V
V
V
CC
CC
CC
IN
IN
> V
> V
= Max, f = f
= Min, I
= Min, I
CC
CC
CC
CC
IH
CC
, CE
, CE
I
OUT
+ 0.5 V
+ 0.5 V
or V
< V
– 0.3V, or V
OH
OL
< V
1
1
CC
IN
> V
> V
= 8.0 mA
MAX
= –4.0 mA
< V
CC
Test Conditions
IH
CC
, Output disabled
= 1/t
IL
, CE
, f = f
– 0.3V, CE
IN
RC,
Static Discharge Voltage............ ...............................>2001 V
(MIL-STD-883, Method 3015)
Latch Up Current ..................................................... >200 mA
Operating Range
2
< 0.3V, f = 0
< V
MAX
I
OUT
Industrial
IL,
Range
2
= 0 mA CMOS levels
< 0.3V,
–40 C to +85 C
Temperature
Ambient
–0.3
Min
2.4
2.0
–1
–1
–
–
–
CY7C1061DV33
–10
V
CC
Max
175
0.4
0.8
+1
+1
30
25
–
+ 0.3
3.3 V  0.3 V
Page 6 of 17
V
CC
Unit
mA
mA
mA
A
A
V
V
V
V
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