NAND16GW3F2AN6E NUMONYX, NAND16GW3F2AN6E Datasheet - Page 43

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NAND16GW3F2AN6E

Manufacturer Part Number
NAND16GW3F2AN6E
Description
IC FLASH 16GBIT SLC 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND16GW3F2AN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
16G (2G x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
NAND08GW3F2A, NAND16GW3F2A
8
Write protect operation
Erase and program operations are automatically reset when WP goes Low (t
Erase and program operations are enabled and disabled as shown in
Figure
If WP goes Low after the device has gone busy, the internal reset is executed and
program/erase operation exits. The device becomes ready again after the internal reset
sequence is executed. To avoid any corruption of stored data, WP must not go Low after the
Confirm command.
Figure 27. Program enable waveform
Figure 28. Program disable waveform
29, and
Figure
I/Ox
R/B
WP
I/Ox
R/B
WP
W
W
30.
tVLWH
tVHWH
80h
80h
10h
10h
Write protect operation
Figure
AI14277
AI14276
VLWH
27,
Figure
= 100 ns).
43/65
28,

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