CY7C1412AV18-167BZC Cypress Semiconductor Corp, CY7C1412AV18-167BZC Datasheet - Page 19

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CY7C1412AV18-167BZC

Manufacturer Part Number
CY7C1412AV18-167BZC
Description
IC SRAM 36MBIT 167MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1412AV18-167BZC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
36M (2M x 18)
Speed
167MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
Q2668730

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1412AV18-167BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document #: 38-05615 Rev. *C
Maximum Ratings
(Above which the useful life may be impaired.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied........................................... ––55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Voltage Applied to Outputs
in High-Z State .................................... –0.5V to V
DC Input Voltage
Electrical Characteristics
Capacitance
DC Electrical Characteristics
V
V
V
V
V
V
V
V
I
I
V
I
I
AC Input Requirements
V
V
C
C
C
Notes:
15. All voltage referenced to Ground.
16. Output are impedance controlled. I
17. Output are impedance controlled. I
18. Overshoot: V
19. Power-up: Assumes a linear ramp from 0V to V
20. V
21. Tested initially and after any design or process change that may affect these parameters.
X
OZ
DD
SB1
Parameter
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
IH
IL
IN
CLK
O
Parameter
REF
(Min.) = 0.68V or 0.46V
IH
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
Automatic Power-down
Current
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
(AC) < V
[21]
Input Capacitance
Clock Input Capacitance
Output Capacitance
DD
[18]
Operating Supply
DD
DDQ
...............................–0.5V to V
DDQ
Description
Description
Relative to GND........ –0.5V to +2.9V
Relative to GND ...... –0.5V to +V
+0.85V (Pulse width less than t
Over the Operating Range
DDQ
, whichever is larger, V
Description
OH
OL
Over the Operating Range
= (V
= –(V
Over the Operating Range
[18]
[18]
DDQ
DDQ
[20]
/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ω.
DD
/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ωs.
(min.) within 200 ms. During this time V
Note 16
Note 17
I
I
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
mA, f = f
Max. V
Deselected, V
or V
1/t
OH
OL
DD
CYC,
REF
= −0.1 mA, Nominal Impedance
= 0.1 mA, Nominal Impedance
IN
= Max., I
DDQ
CYC
(Max.) = 0.95V or 0.54V
≤ V
DD
DD
Inputs Static
MAX
/2), Undershoot: V
Test Conditions
Test Conditions
I
I
, Both Ports
+ 0.3V
+ 0.3V
IL
≤ V
≤ V
, f = f
= 1/t
DDQ,
OUT
DDQ
DD
T
V
V
IN
A
DD
DDQ
[15, 19]
MAX
≥ V
= 25°C, f = 1 MHz,
CYC
= 0
Output Disabled
= 1.8V
IH
= 1.5V
=
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Com’l
Ind’l
IL
Range
167 MHz
200 MHz
250 MHz
167 MHz
200 MHz
250 MHz
(AC) > –1.5V (Pulse width less than t
Test Conditions
DDQ
, whichever is smaller.
IH
< V
Temperature (T
DD
–40°C to +85°C
0°C to +70°C
and V
V
V
Ambient
DDQ
DDQ
V
V
V
DDQ
REF
REF
DDQ
Min.
–0.3
0.68
Min.
V
/2 – 0.12
/2 – 0.12
1.7
1.4
−5
−5
SS
< V
+ 0.1
+ 0.2
– 0.2
DD
.
A
)
CYC
Typ.
0.75
Typ.
1.8
1.5
1.8 ± 0.1V
CY7C1410AV18
CY7C1425AV18
CY7C1412AV18
CY7C1414AV18
V
/2).
DD
[19]
V
V
Max.
DDQ
DDQ
V
V
V
5
5
4
REF
REF
DDQ
V
Max.
1065
Max.
V
0.95
740
870
270
300
350
1.9
/2 + 0.12
/2 + 0.12
0.2
DDQ
5
5
DD
– 0.1
– 0.2
Page 19 of 25
+0.3
1.4V to V
V
DDQ
[19]
Unit
Unit
Unit
pF
pF
pF
mA
mA
mA
mA
mA
mA
µA
µA
DD
V
V
V
V
V
V
V
V
V
V
V
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