CY7C028V-25AC Cypress Semiconductor Corp, CY7C028V-25AC Datasheet - Page 7

no-image

CY7C028V-25AC

Manufacturer Part Number
CY7C028V-25AC
Description
IC SRAM 1MB DUAL 100-TQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C028V-25AC

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Memory Size
1M (64K x 16)
Speed
25ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C028V-25AC
Manufacturer:
CYPRESS
Quantity:
1 831
Part Number:
CY7C028V-25AC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Characteristics
Data Retention Mode
The CY7C027V/028V and CY7037V/038V are designed with
battery backup in mind. Data retention voltage and supply cur-
rent are guaranteed over temperature. The following rules en-
sure data retention:
1. Chip enable (CE) must be held HIGH during data retention, with-
2. CE must be kept between V
3. The RAM can begin operation >t
t
t
t
t
t
t
INS
INR
SOP
SWRD
SPS
SAA
INTERRUPT TIMING
SEMAPHORE TIMING
in V
during the power-up and power-down transitions.
minimum operating voltage (3.0 volts).
Parameter
CC
to V
CC
– 0.2V.
INT Set Time
INT Reset Time
SEM Flag Update Pulse (OE or SEM)
SEM Flag Write to Read Time
SEM Flag Contention Window
SEM Address Access Time
[17]
CC
Description
– 0.2V and 70% of V
Over the Operating Range
RC
after V
CC
reaches the
CC
[11]
(continued)
7
Min.
10
5
5
Timing
V
CE
ICC
Note:
19. CE = V
CC
-15
Parameter
DR1
tested.
Max.
15
15
15
CC
, V
in
CY7C027V/028V
CY7C037V/038V
= GND to V
Min.
10
5
5
3.0V
@ VCC
Data Retention Mode
Test Conditions
V
-20
CC
CC
V
Max.
, T
to V
CC
20
20
20
A
DR
= 25 C. This parameter is guaranteed but not
CC
2.0V
= 2V
– 0.2V
CY7C027V/028V
CY7C037V/038V
Min.
12
5
5
[19]
3.0V
-25
Max.
20
20
25
Max.
50
V
t
IH
RC
Unit
Unit
ns
ns
ns
ns
ns
ns
A

Related parts for CY7C028V-25AC