CY7C1512AV18-200BZXC Cypress Semiconductor Corp, CY7C1512AV18-200BZXC Datasheet - Page 18

• Manufacturer Part Number: CY7C1512AV18-200BZXC
• Description: IC SRAM 72MBIT 200MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1512AV18-200BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 72M (4M x 18)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied.. –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z ........ –0.5V to V
DC Input Voltage
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V
Latch up Current.................................................... > 200 mA
Operating Range
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range
Notes
Document #: 001-06984 Rev. *E
V
V
V
V
V
V
V
V
I
I
V
I
15. Power up: Assumes a linear ramp from 0V to V
16. Output are impedance controlled. I
17. Output are impedance controlled. I
18. V
19. The operation current is calculated with 50% read cycle and 50% write cycle.
Commercial
Industrial
X
OZ
DD
Parameter
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
[19]
Range
REF
(min) = 0.68V or 0.46V
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
DD
[11]
Temperature (T
Operating Supply
–40°C to +85°C
DD
DDQ
0°C to +70°C
.............................. –0.5V to V
Description
Ambient
Relative to GND ........–0.5V to +2.9V
Relative to GND.......–0.5V to +V
DDQ
[12]
, whichever is larger, V
OH
OL
= (V
=
A
−
)
(V
DDQ
DDQ
[18]
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
1.8 ± 0.1V
DD
/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms.
V
(min) within 200 ms. During this time V
DD
Note 16
Note 17
I
I
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
I
f = f
OH
OL
OUT
DD
[15]
REF
= 0.1 mA, Nominal Impedance
= −0.1 mA, Nominal Impedance
MAX
= Max,
= 0 mA,
DDQ
(max) = 0.95V or 0.54V
DD
= 1/t
V
I
I
1.4V to
+ 0.5V
+ 0.5V
≤ V
≤ V
DDQ
V
Test Conditions
CYC
DD
DDQ
DDQ,
DD
[15]
Output Disabled
Neutron Soft Error Immunity
DDQ
LSBU
LMBU
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical χ
cation Note AN 54908 “Accelerated Neutron SER Testing and Calculation of
Terrestrial Failure Rates”
Parameter
250 MHz (x18)
200 MHz (x18)
167 MHz (x18)
, whichever is smaller.
IH
< V
DD
2
, 95% confidence limit calculation. For more details refer to Appli-
and V
(x36)
(x36)
(x36)
Single Event
Description
DDQ
Single-Bit
Latch up
Multi-Bit
Logical
Upsets
Logical
Upsets
V
V
< V
DDQ
DDQ
V
V
DDQ
DD
REF
–0.3
0.68
.
Min
V
1.7
1.4
/2 – 0.12
/2 – 0.12
−5
−5
SS
+ 0.1
– 0.2
Test Con-
ditions
25°C
25°C
85°C
0.75
Typ
1.8
1.5
CY7C1512AV18
CY7C1514AV18
V
V
Typ
320
DDQ
DDQ
V
V
0
0
DDQ
REF
V
1100
Max
0.95
V
900
800
900
750
800
1.9
/2 + 0.12
/2 + 0.12
0.2
DDQ
DD
5
5
– 0.1
+ 0.3
Page 18 of 24
Max*
0.01
368
0.1
Unit
Unit
FIT/
FIT/
FIT/
Dev
mA
Mb
Mb
μA
μA
V
V
V
V
V
V
V
V
V
[+] Feedback