IPP80CN10NGXKSA1 Infineon Technologies

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IPP80CN10NGXKSA1

Manufacturer Part Number

IPP80CN10NGXKSA1

Description

MOSFET

Manufacturer

Infineon Technologies

Specifications of IPP80CN10NGXKSA1

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

13 A

Resistance Drain-source Rds (on)

61 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

TO-220-3

Fall Time

3 ns

Forward Transconductance Gfs (max / Min)

13 S

Gate Charge Qg

8 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

31 W

Rise Time

4 ns

Part # Aliases

IPP80CN10NGHKSA1 SP000680966

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