ALD1101BSAL Advanced Linear Devices, ALD1101BSAL Datasheet

ALD1101BSAL

Manufacturer Part Number

ALD1101BSAL

Description

MOSFET Dual N-Ch FET 10.6 500mW 0.7V 10Ohm

Manufacturer

Advanced Linear Devices

Datasheet

1.ALD1101BSAL.pdf (8 pages)

Specifications of ALD1101BSAL

Rohs

yes

Current page: 1 of 8
Download datasheet (73Kb)

FEATURES

• Low threshold voltage of 0.7V

• Low input capacitance

• Low Vos grades -- 2mV, 5mV, 10mV

• High input impedance -- 10

• Negative current (I

• Enhancement-mode (normally off)

• DC current gain 10

• RoHS compliant

ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))

* Contact factory for leaded (non-RoHS) or high temperature versions.

GENERAL DESCRIPTION

The ALD1101 is a monolithic dual N-channel matched transistor pair

intended for a broad range of analog applications. These enhancement-

mode transistors are manufactured with Advanced Linear Devices' en-

hanced ACMOS silicon gate CMOS process.

The ALD1101 offers high input impedance and negative current tempera-

ture coefficient. The transistor pair is matched for minimum offset voltage

and differential thermal response, and it is designed for switching and

amplifying applications in +2V to +12V systems where low input bias

current, low input capacitance and fast switching speed are desired. Since

these are MOSFET devices, they feature very large (almost infinite)

current gain in a low frequency, or near DC, operating environment. When

used with an ALD1102, a dual CMOS analog switch can be constructed.

In addition, the ALD1101 is intended as a building block for differential

amplifier input stages, transmission gates, and multiplexer applications.

The ALD1101 is suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result in extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 50pA at room temperature. For example, DC beta of the device

at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.

0°C to +70°C

8-Pin

Small Outline

Package (SOIC)

ALD1101ASAL

ALD1101BSAL

ALD1101SAL

INEAR

DVANCED

EVICES,

Operating Temperature Range

) temperature coefficient

NC.

0°C to +70°C

8-Pin

Plastic Dip

Package

ALD1101APAL

ALD1101BPAL

ALD1101PAL

Ω typical

DUAL N-CHANNEL MATCHED MOSFET PAIR

-55°C to +125°C

8-Pin

CERDIP

Package

ALD1101DA

www.aldinc.com

PIN CONFIGURATION

BLOCK DIAGRAM

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Analog switches

• Choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog inverter

SOURCE

* IC pin is internally connected. Do not connect externally.

DRAIN

GATE

DRAIN 1 (3)

DRAIN 2 (5)

SAL, PAL, DA PACKAGES

ALD1101A/ALD1101B

GATE 1 (2)

GATE 2 (6)

TOP VIEW

SOURCE 1 (1)

SUBSTRATE (8)

SOURCE 2 (7)

ALD1101

SUBSTRATE

SOURCE

GATE

DRAIN

Related parts for ALD1101BSAL

ALD1101BSAL Summary of contents

Page 1

... Small Outline Plastic Dip Package (SOIC) Package ALD1101ASAL ALD1101APAL ALD1101BSAL ALD1101BPAL ALD1101SAL ALD1101PAL * Contact factory for leaded (non-RoHS) or high temperature versions. Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 APPLICATIONS • Precision current mirrors • ...

Page 2

... Advanced Linear Devices -55°C to +125°C -65°C to +150°C ALD1101 Test Min Typ Max Unit Conditions 0.4 0.7 1 10µ 100µ -1.2 mV/° ...

Page 3

... ALD1101A/ALD1101B/ALD1101 V = 12V GS 10V 10mA +125° Advanced Linear Devices LOW VOLTAGE OUTPUT CHARACTERISTICS 12V 25° -160 -80 0 DRAIN -SOURCE VOLTAGE (mV) TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS 20 15 -4V V ...

Page 4

... V + -Vt R SET ~ = 4 R SET ALD1102, 1/2 ALD1107, or ALD1117 I SET OUT Q SET Advanced Linear Devices CURRENT SOURCE WITH GATE CONTROL ALD1102 +5V 1/2 ALD1107, or ALD1117 SET SET 1/2 ALD1101, 1/4 ALD1106, or 1/2 ALD1116 OFF Channel MOSFET Channel MOSFET ...

Page 5

... +5V R SET 1 SET SET CASCODE CURRENT SOURCES + SET SET Advanced Linear Devices P- CHANNEL CURRENT SOURCE +5V ALD1102, 1/2 ALD1107, or ALD1117 SOURCE I R SET SET Channel MOSFET +5V ...

Page 6

... S (45° (45° ALD1101A/ALD1101B/ALD1101 SOIC-8 PACKAGE DRAWING 8 Pin Plastic SOIC Package E Dim D ø ø Advanced Linear Devices Millimeters Inches Min Max Min 1.75 0.053 1.35 0.25 0.004 0.10 0.45 0.014 0.35 0.25 0.007 0.18 5.00 0.185 4.69 4.05 0.140 3.50 1.27 BSC 0.050 BSC 6.30 0.224 5.70 ...

Page 7

... 3. 0. 0.20 c 9.40 D-8 5. 2.79 S-8 1.02 ø Advanced Linear Devices Millimeters Inches Max Min 5.08 0.105 1.27 0.015 2.03 0.050 1.65 0.035 0.51 0.015 0.30 0.008 11.68 0.370 7.11 0.220 8.26 0.300 2.79 0.090 7.87 0.290 3.81 0.110 2.03 0.040 0° 15° 0° Max 0.200 0.050 0.080 0.065 ...

Page 8

... CERDIP-8 PACKAGE DRAWING 8 Pin CERDIP Package Dim D Ø Advanced Linear Devices Millimeters Inches Min Max Min 5.08 0.140 3.55 2.16 0.050 1.27 1.65 0.038 0.97 0.58 0.014 0.36 0.20 0.38 0.008 -- 10.29 -- 5.59 7.87 0.220 7.73 8.26 0.290 0.100 BSC 2.54 BSC 0.300 BSC 7.62 BSC 3 ...

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