ALD1101BSAL Advanced Linear Devices, ALD1101BSAL Datasheet - Page 2

• Manufacturer Part Number: ALD1101BSAL
• Description: MOSFET Dual N-Ch FET 10.6 500mW 0.7V 10Ohm
• Manufacturer: Advanced Linear Devices

Specifications of ALD1101BSAL

• Rohs: yes

ALD1101A/ALD1101B/ALD1101
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
Gate-source voltage, V
Power dissipation
Operating temperature range
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
T
Transconductance G
A
Parameter
Gate Threshold
Voltage
Offset Voltage
V
Gate Threshold
Temperature Drift
On Drain Current
Mismatch
Output
Conductance
Drain Source
ON Resistance
Drain Source
ON Resistance
Mismatch
Drain Source
Breakdown
Voltage
Off Drain Current
Gate Leakage
Current
Input
Capacitance
GS1
= 25
- V
°
GS2
C unless otherwise specified
Symbol
V
V
TC
I
∆G
G
R
∆R
BV
I
I
C
DS (ON)
DS(OFF)
GSS
T
OS
fs
OS
DS(ON)
ISS
VT
DS(ON)
DSS
fs
GS
DS
Min
0.4
25
12
SAL, PALpackages
DA package
5
ALD 1101A
Typ
-1.2
200
0.7
0.5
0.5
0.1
40
10
50
1
6
Max
1.0
75
50
10
10
2
4
4
Min
Advanced Linear Devices
0.4
25
12
ALD1101B
5
Typ
-1.2
200
0.7
0.5
0.5
0.1
40
10
50
1
6
Max
1.0
75
50
10
10
5
4
4
Min
0.4
25
12
5
ALD1101
-1.2
Typ
200
0.7
0.5
0.5
0.1
40
10
50
1
6
Max
1.0
10
75
50
10
10
4
4
Unit
V
mV
mV/°C
mA
mmho
%
µmho
Ω
%
V
nA
µA
pA
nA
pF
I
I
V
V
V
V
V
I
V
T
V
T
DS
DS
DS
A
A
GS
DS
DS
DS
DS
DS
DS
= 125°C
= 125°C
Conditions
= 10µA V
= 100µA V
= 10µA V
= 5V I
= 5V I
= 0.1V V
= 0.1V V
=12V V
=0V V
= V
DS
Test
-55°C to +125°C
-65°C to +150°C
DS
DS
= 5V
GS
0°C to +70°C
GS
GS
GS
= 10mA
GS
GS
= 10mA
GS
=12V
= 0V
=0V
= V
= 5V
= 5V
= V
500mW
+260°C
DS
10.6V
10.6V
DS
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