IPB010N06N Infineon Technologies

IPB010N06N

Manufacturer Part Number

IPB010N06N

Description

MOSFET 60V TO-263

Manufacturer

Infineon Technologies

Specifications of IPB010N06N

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

180 A

Resistance Drain-source Rds (on)

1 mOhms

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

TO-263-7

Fall Time

23 ns

Forward Transconductance Gfs (max / Min)

310 S / 160 S

Gate Charge Qg

208 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

300 W

Rise Time

36 ns

Typical Turn-off Delay Time

74 ns

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IPB010N06N

Manufacturer:

DIODES

Quantity:

3 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IPB010N06N

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IPB010N06NATMA1

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