IPD50N06S2L13 Infineon Technologies

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IPD50N06S2L13

Manufacturer Part Number

IPD50N06S2L13

Description

MOSFET

Manufacturer

Infineon Technologies

Specifications of IPD50N06S2L13

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

50 A

Resistance Drain-source Rds (on)

12.7 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

TO-252

Fall Time

12 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

136 W

Rise Time

29 ns

Factory Pack Quantity

2500

Typical Turn-off Delay Time

43 ns

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