IPB100N06S205 Infineon Technologies
IPB100N06S205
Manufacturer Part Number
IPB100N06S205
Description
MOSFET MOSFET
Manufacturer
Infineon Technologies
Specifications of IPB100N06S205
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Resistance Drain-source Rds (on)
4.7 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-263
Fall Time
30 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
300 W
Rise Time
31 ns
Typical Turn-off Delay Time
59 ns