IPB100N08S2L07 Infineon Technologies

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IPB100N08S2L07

Manufacturer Part Number

IPB100N08S2L07

Description

MOSFET MOSFET

Manufacturer

Infineon Technologies

Specifications of IPB100N08S2L07

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

75 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A

Resistance Drain-source Rds (on)

6.5 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

TO-263

Fall Time

22 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

300 W

Rise Time

56 ns

Typical Turn-off Delay Time

85 ns

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