IS24C02B-2ZLI-TR ISSI, Integrated Silicon Solution Inc, IS24C02B-2ZLI-TR Datasheet - Page 8

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IS24C02B-2ZLI-TR

Manufacturer Part Number
IS24C02B-2ZLI-TR
Description
IC EEPROM 2KBIT 1MHZ 8TSSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheets

Specifications of IS24C02B-2ZLI-TR

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
2K (256 x 8)
Speed
400kHz, 1MHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-TSSOP
Density
2Kb
Interface Type
Serial (2-Wire)
Organization
256x8
Access Time (max)
400ns
Frequency (max)
1MHz
Write Protection
Yes
Data Retention
100Year
Operating Supply Voltage (typ)
2.5/3.3/5V
Package Type
TSSOP
Operating Temp Range
-40C to 85C
Supply Current
3mA
Operating Supply Voltage (min)
1.8V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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IS24C01B IS24C02B
READ OPERATIOn
Read operations are initiated in the same manner as
Write operations, except that the (R/W) bit of the Slave
address is set to “1”. There are three Read operation
options: current address read, random address read and
sequential read.
Current Address Read
The IS24C01B/02B contains an internal address counter
which maintains the address of the last byte accessed,
incremented by one. For example, if the previous operation
is either a Read or Write operation addressed to the
address location n, the internal address counter would
increment to address location n+1. When the EEPROM
receives the Slave Addressing Byte with a Read operation
(R/W bit set to “1”), it will respond an ACK and transmit the
8-bit data byte stored at address location n+1. The Master
should not acknowledge the transfer but should generate
a Stop condition so the IS24C01B/02B discontinues
transmission. If 'n' is the last byte of the memory, the
data from location '0' will be transmitted. (Refer to Figure
8. Current Address Read Diagram.)
Random Address Read
Selective Read operations allow the Master device to select
at random any memory location for a Read operation. The
Master device first performs a 'dummy' Write operation by
sending the Start condition, Slave address and byte address
of the location it wishes to read. After the IS24C01B/02B
acknowledges the byte address, the Master device resends
the Start condition and the Slave address, this time with
the R/W bit set to one. The EEPROM then responds
with its ACK and sends the data requested. The Master
device does not send an ACK but will generate a Stop
condition. (Refer to Figure 9. Random Address Read
Diagram.)
Sequential Read
Sequential Reads can be initiated as either a Current
Address Read or Random Address Read. After the
IS24C01B/02B sends the initial byte sequence, the Master
device now responds with an ACK, indicating it requires
additional data from the IS24C01B/02B. The EEPROM
continues to output data for each ACK received. The
Master device terminates the sequential Read operation
by pulling SDA High (no ACK) indicating the last data word
to be read, followed by a Stop condition.
The data output is sequential, with the data from address
n followed by the data from address n+1,n+2 ... etc. The
address counter increments by one automatically, allowing
the entire memory contents to be serially read during
sequential Read operation. When the memory address
boundary of 127 or 255 (depending on the device) is
reached, the address counter “rolls over” to address 0,
and the device continues to output data. (Refer to Figure
10. Sequential Read Diagram).
Integrated Silicon Solution, Inc. — www.issi.com
9/11/09
Rev. F

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