BC557BRL1 ON Semiconductor, BC557BRL1 Datasheet - Page 2

• Manufacturer Part Number: BC557BRL1
• Description: Transistors Bipolar - BJT 100mA 50V PNP
• Manufacturer: ON Semiconductor

Specifications of BC557BRL1

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 50 V
• Collector- Emitter Voltage Vceo Max: - 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: - 45 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 320 MHz
• Dc Collector/base Gain Hfe Min: 180 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92-3 (TO-226)
• Continuous Collector Current: - 0.1 A
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 2000

1. I
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector−Emitter Leakage Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Base−Emitter On Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Noise Figure
Small−Signal Current Gain
C
= −10 mAdc on the constant base current characteristics, which yields the point I
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(I
R
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
S
CES
CES
CES
CB
= −100 mAdc, I
= −2.0 mAdc, I
= −100 mAdc)
= −10 mAdc, V
= −2.0 mAdc, V
= −100 mAdc, V
= −10 mAdc, I
= −10 mAdc, I
= −100 mAdc, I
= −10 mAdc, I
= −100 mAdc, I
= −2.0 mAdc, V
= −10 mAdc, V
= −10 mA, V
= −0.2 mAdc, V
= −2.0 mAdc, V
= 2.0 kW, f = 1.0 kHz, Df = 200 Hz)
= −10 V, I
= −40 V)
= −20 V)
= −20 V, T
C
CE
A
= 0, f = 1.0 MHz)
B
B
B
CE
C
B
CE
= 125°C)
B
B
CE
CE
CE
CE
= −5.0 V, f = 100 MHz)
= −0.5 mAdc)
= see Note 1)
= −0.5 mAdc)
CE
= 0)
= 0)
= −5.0 mAdc)
= −5.0 mAdc)
= −5.0 V)
= −5.0 Vdc)
= −5.0 V)
= −5.0 Vdc)
= −5.0 V,
= 5.0 V, f = 1.0 kHz)
= −5.0 V)
Characteristic
(T
BC556B, BC557A, B, C, BC558B
A
= 25°C unless otherwise noted)
C Series Devices
C Series Devices
C Series Devices
C Series Devices
B Series Devices
B Series Devices
B Series Devices
B Series Devices
http://onsemi.com
A Series Device
A Series Device
A Series Device
A Series Device
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
BC557
BC556
BC557
BC558
BC556
BC557
BC558
BC557
2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
I
BE(on)
C
h
CES
NF
h
f
FE
T
ob
fe
C
= −11 mAdc, V
−0.55
−5.0
−5.0
−5.0
Min
−65
−45
−30
−80
−50
−30
120
120
180
420
125
125
240
450
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
CE
= −1.0 V.
−0.075
−0.25
−0.62
−2.0
−2.0
−2.0
−0.3
−0.7
−1.0
−0.7
Typ
150
270
170
290
500
120
180
300
280
320
360
3.0
2.0
2.0
2.0
90
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.65
−0.82
−100
−100
−100
Max
−4.0
−4.0
−4.0
−0.3
−0.6
−0.7
800
220
460
800
900
260
500
900
6.0
10
10
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MHz
Unit
nA
dB
mA
pF
V
V
V
V
V
V
−
−