BC557BRL1 ON Semiconductor, BC557BRL1 Datasheet - Page 3

• Manufacturer Part Number: BC557BRL1
• Description: Transistors Bipolar - BJT 100mA 50V PNP
• Manufacturer: ON Semiconductor

Specifications of BC557BRL1

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 50 V
• Collector- Emitter Voltage Vceo Max: - 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: - 45 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 320 MHz
• Dc Collector/base Gain Hfe Min: 180 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92-3 (TO-226)
• Continuous Collector Current: - 0.1 A
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 2000

−2.0
−1.6
−1.2
−0.8
−0.4
2.0
1.5
1.0
0.7
0.5
0.3
0.2
7.0
5.0
3.0
2.0
1.0
10
0
−0.4
−0.2
I
−10 mA
−0.02
C
−0.6
V
T
=
A
CE
−0.5 −1.0
Figure 1. Normalized DC Current Gain
Figure 3. Collector Saturation Region
= 25°C
= −10 V
−1.0
I
C
V
Figure 5. Capacitances
−0.1
I
, COLLECTOR CURRENT (mAdc)
R
C
, REVERSE VOLTAGE (VOLTS)
−2.0
= −20 mA
−2.0
I
B
, BASE CURRENT (mA)
−5.0 −10
I
C
−4.0 −6.0
C
= −50 mA
ib
C
−1.0
ob
BC556B, BC557A, B, C, BC558B
−20
T
−10
A
= 25°C
T
I
C
I
A
C
= −200 mA
= 25°C
−50 −100 −200
= −100 mA
−20 −30 −40
http://onsemi.com
−10
BC557/BC558
−20
3
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
400
300
200
100
150
1.0
1.2
1.6
2.0
2.4
2.8
80
60
40
30
20
0
−0.5
−0.1 −0.2
Figure 4. Base−Emitter Temperature Coefficient
T
Figure 6. Current−Gain − Bandwidth Product
A
−0.2
Figure 2. “Saturation” and “On” Voltages
= 25°C
−55°C to +125°C
−1.0
−0.5 −1.0 −2.0
I
I
C
C
I
−2.0 −3.0
, COLLECTOR CURRENT (mAdc)
C
, COLLECTOR CURRENT (mAdc)
, COLLECTOR CURRENT (mA)
V
−1.0
V
V
BE(on)
CE(sat)
BE(sat)
@ V
@ I
@ I
−5.0
CE
C
C
/I
/I
B
= −10 V
B
= 10
−5.0
= 10
−10
−10
−10
−20
−20 −30
V
T
A
CE
= 25°C
= −10 V
−50 −100
−100
−50