BC557BRL1 ON Semiconductor, BC557BRL1 Datasheet - Page 4

• Manufacturer Part Number: BC557BRL1
• Description: Transistors Bipolar - BJT 100mA 50V PNP
• Manufacturer: ON Semiconductor

Specifications of BC557BRL1

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 50 V
• Collector- Emitter Voltage Vceo Max: - 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: - 45 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 320 MHz
• Dc Collector/base Gain Hfe Min: 180 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92-3 (TO-226)
• Continuous Collector Current: - 0.1 A
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 2000

−2.0
−1.6
−1.2
−0.8
−0.4
2.0
1.0
0.5
0.2
8.0
6.0
4.0
2.0
20
10
40
−0.1
0
−0.02
−0.1 −0.2
T
−10 mA
−0.2
J
I
V
T
C
= 25°C
A
−0.05
CE
=
Figure 9. Collector Saturation Region
= 25°C
= −5.0 V
−0.5
−0.1
−1.0
Figure 7. DC Current Gain
V
I
Figure 11. Capacitance
C
R
−2.0 −5.0
, COLLECTOR CURRENT (mA)
−20 mA
, REVERSE VOLTAGE (VOLTS)
−0.2
−1.0
I
B
, BASE CURRENT (mA)
−2.0
−0.5
C
ib
−10
−50 mA
−5.0
−1.0
−20
C
ob
−2.0
−50 −100
BC556B, BC557A, B, C, BC558B
−10
−100 mA
−20
T
−5.0
J
−200
= 25°C
−200 mA
−50
−10
http://onsemi.com
−100
−20
BC556
4
−1.0
−0.8
−0.6
−1.0
−1.4
−1.8
−2.2
−2.6
−3.0
−0.4
−0.2
500
200
100
50
20
0
−0.2
−0.2
Figure 10. Base−Emitter Temperature Coefficient
Figure 12. Current−Gain − Bandwidth Product
V
CE
T
−0.5
−0.5
J
q
= −5.0 V
V
= 25°C
V
VB
V
BE
CE(sat)
BE(sat)
for V
@ V
−1.0
−1.0
−1.0
@ I
BE
@ I
CE
I
I
I
Figure 8. “On” Voltage
C
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
C
−2.0
= −5.0 V
−2.0
C
/I
/I
B
B
= 10
= 10
−5.0
−5.0
−10
−10
−10
−55°C to 125°C
−20
−20
−100
−50 −100
−50 −100
−200
−200