IS61LPS51236A-250B3LI-TR ISSI, Integrated Silicon Solution Inc, IS61LPS51236A-250B3LI-TR Datasheet - Page 5

• Manufacturer Part Number: IS61LPS51236A-250B3LI-TR
• Description: IC SRAM 18MBIT 250MHZ 165FBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LPS51236A-250B3LI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61VPS25672A, IS61LPS25672A
IS61VPS51236A, IS61LPS51236A, IS61VPS102418A, IS61LPS102418A
119 BGA PACKAGE PIN CONFIGURATION-
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. N
02/12/2010
Note: * A
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE
BWx (x=a-d)
BWE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
0
and A
V
V
V
V
V
DQc
DQc
DQc
DQc
DQd
DQd
DQd
DQd
NC
NC
NC
NC
DDQ
DDQ
DDQ
DDQ
DDQ
1
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
Pin Name
Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Address Status Processor
Address Status Controller
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Synchronous Byte Write Controls
Byte Write Enable
DQPc
DQPd
TMS
DQc
DQc
DQc
DQc
DQd
DQd
DQd
DQd
V
NC
A
A
A
A
2
DD
MODE
BWc
BWd
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
TDI
NC
A
A
A
A
3
ADSP
ADSC
BWE
ADV
TCK
CLK
V
GW
V
V
OE
A
A
NC
CE
NC
A
4
DD
DD
DD
1
0
*
*
512K
BWb
BWa
TDO
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
NC
A
A
A
A
5
X
Symbol
OE
ZZ
MODE
TCK, TDO
NC
DQa-DQd
DQPa-Pd
V
V
Vss
TMS, TDI
36 (TOP VIEW)
DD
DDQ
DQPb
DQPa
DQb
DQb
DQb
DQb
DQa
DQa
DQa
DQa
V
NC
NC
A
A
A
A
6
DD
Pin Name
Output Enable
Power Sleep Mode
Burst Sequence Selection
JTAG Pins
No Connect
Data Inputs/Outputs
Output Power Supply
Power Supply
Output Power Supply
Ground
V
V
V
DQa
V
DQb
DQb
DQb
DQa
DQa
DQa
DQb
NC
ZZ
DDQ
V
DDQ
NC
NC
DDQ
DDQ
7
DDQ
5