M25PX32-VMP6F NUMONYX, M25PX32-VMP6F Datasheet - Page 56

• Manufacturer Part Number: M25PX32-VMP6F
• Description: IC FLASH 32MBIT 75MHZ 8VFQFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25PX32-VMP6F

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VFQFN, 8-VFQFPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25PX32-VMP6FTR

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Table 18.
1. Typical values given for T
2. t
3. Value guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set at ‘1’.
6. V
7. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
8. int(A) corresponds to the upper integer part of A. For example, int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Figure 31. Serial input timing
Symbol
t
t
PP
(success or failure) is known. Avoid applying VPPH to the W/VPP pin during Bulk Erase.
obtained with one sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤
256).
t
t
SSE
CH
t
SE
BE
PPH
S
C
DQ0
DQ1
W
(7)
+ t
should be kept at a valid level until the program or erase operation has completed and its result
CL
tCHSL
must be greater than or equal to 1/ f
Alt.
AC characteristics (continued)
tDVCH
Write Status Register cycle time
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Program OTP cycle time (64 bytes)
Subsector Erase cycle time
Sector Erase cycle time
Bulk Erase cycle time
Test conditions specified in
High Impedance
A
= 25° C.
MSB IN
tSLCH
Parameter
tCHDX
C
.
Table 13
tCLCH
tCHSH
Min
and
LSB IN
Table 15
int(n/8) × 0.025
Typ
1.3
0.8
0.2
70
34
1
(1)
tCHCL
tSHSL
tSHCH
(8)
Max
150
15
80
5
3
AI13728
Unit
ms
ms
ms
ms
s
s