M29W128GH70N6E NUMONYX, M29W128GH70N6E Datasheet - Page 58

IC FLASH 128MBIT 70NS 56TSOP

M29W128GH70N6E

Manufacturer Part Number
M29W128GH70N6E
Description
IC FLASH 128MBIT 70NS 56TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W128GH70N6E

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16Mx8, 8Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
56-TSOP
Package
56TSOP
Cell Type
NOR
Density
128 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
128KByte x 128
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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58/94
Maximum ratings
Stressing the device above the rating listed in
cause permanent damage to the device. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability. These are stress ratings only and
operation of the device at these or any other conditions above those indicated in the
operating sections of this specification is not implied.
Table 21.
1. Minimum voltage may undershoot to 2 V during transition and for less than 20 ns during transitions.
2. Maximum voltage may overshoot to V
3. V
Symbol
V
PPH
T
V
T
PPH
V
V
V
BIAS
CCQ
STG
CC
IO
ID
must not remain at 12 V for more than a total of 80 hrs.
(3)
Absolute maximum ratings
Temperature under bias
Storage temperature
Input or output voltage
Supply voltage
Input/output supply voltage
Identification voltage
Program voltage
Parameter
CC
(1)(2)
+ 2 V during transition and for less than 20 ns during transitions.
Table 21: Absolute maximum ratings
Min
0.6
0.6
0.6
0.6
0.6
50
65
V
CC
Max
13.5
13.5
125
150
4
4
+ 0.6
may
Unit
°C
°C
V
V
V
V
V

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