NAND01GR3B2CZA6E NUMONYX, NAND01GR3B2CZA6E Datasheet - Page 50
NAND01GR3B2CZA6E
Manufacturer Part Number
NAND01GR3B2CZA6E
Description
IC FLASH 1GBIT 63VFBGA
Manufacturer
NUMONYX
Datasheet
1.NAND01GW3B2CN6E.pdf
(61 pages)
Specifications of NAND01GR3B2CZA6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GR3B2CZA6E
Manufacturer:
ST
Quantity:
104
Company:
Part Number:
NAND01GR3B2CZA6E
Manufacturer:
Numonyx
Quantity:
70
Company:
Part Number:
NAND01GR3B2CZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
DC and AC parameters
Figure 25. Page read operation AC waveforms
1. A fifth address cycle is required for 2-Gbit devices only.
50/61
RB
I/O
CL
AL
W
E
R
Command
Code
00h
cycle 1
Add.N
tWLWL
Address N Input
cycle 2
Add.N
cycle 3
Add.N
cycle 4
Add.N
tWHBH
cycle 5
Add.N
tWHBL
tBLBH1
30h
Busy
from Address N to Last Byte or Word in Page
tRLRH
Data
tALLRL2
N
Data
N+1
(Read Cycle time)
Data Output
NAND01G-B2B, NAND02G-B2C
tRLRL
Data
N+2
tEHQZ
tRHQZ
Data
Last
ai13109b