NAND01G-B STMICROELECTRONICS [STMicroelectronics], NAND01G-B Datasheet
NAND01G-B
Manufacturer Part Number
NAND01G-B
Description
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
1.NAND01G-B.pdf
(64 pages)
- Current page: 1 of 64
- Download datasheet (632Kb)
Feature summary
February 2006
High Density NAND Flash memories
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NAND interface
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Supply voltage
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Page size
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Block size
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Page Read/Program
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Copy Back Program mode
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Cache Program and Cache Read modes
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Fast Block Erase
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Status Register
Electronic Signature
Chip Enable ‘don’t care’
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Up to 2 Gbit memory array
Up to 64Mbit spare area
Cost effective solutions for mass
storage applications
x8 or x16 bus width
Multiplexed Address/ Data
Pinout compatibility for all densities
1.8V device: V
3.0V device: V
x8 device: (2048 + 64 spare) Bytes
x16 device: (1024 + 32 spare) Words
x8 device: (128K + 4K spare) Bytes
x16 device: (64K + 2K spare) Words
Random access: 25µs (max)
Sequential access: 50ns (min)
Page program time: 300µs (typ)
Fast page copy without external
buffering
Internal Cache Register to improve the
program and read throughputs
Block erase time: 2ms (typ)
for simple interface with microcontroller
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
DD
DD
= 1.7 to 1.95V
= 2.7 to 3.6V
Rev 4.0
ECOPACK
Development tools
Serial Number option
Data protection
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Data integrity
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Hardware and Software Block Locking
Hardware Program/Erase locked during
Power transitions
100,000 Program/Erase cycles
10 years Data Retention
Error Correction Code software and
hardware models
Bad Blocks Management and Wear
Leveling algorithms
File System OS Native reference
software
Hardware simulation models
TFBGA63 9.5 x 12 x 1.2mm
VFBGA63 9.5 x 12 x 1mm
®
TSOP48 12 x 20mm
packages
FBGA
NAND01G-B
NAND02G-B
1 Gbit, 2 Gbit,
www.st.com
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