NAND01G-B STMICROELECTRONICS [STMicroelectronics], NAND01G-B Datasheet

NAND01G-B

Manufacturer Part Number

NAND01G-B

Description

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

Manufacturer

STMICROELECTRONICS [STMicroelectronics]

Datasheet

1.NAND01G-B.pdf (64 pages)

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Feature summary

February 2006

High Density NAND Flash memories

–

NAND interface

–

Supply voltage

–

Page size

–

Block size

–

Page Read/Program

–

Copy Back Program mode

–

Cache Program and Cache Read modes

–

Fast Block Erase

–

Status Register

Electronic Signature

Chip Enable ‘don’t care’

–

Up to 2 Gbit memory array

Up to 64Mbit spare area

Cost effective solutions for mass

storage applications

x8 or x16 bus width

Multiplexed Address/ Data

Pinout compatibility for all densities

1.8V device: V

3.0V device: V

x8 device: (2048 + 64 spare) Bytes

x16 device: (1024 + 32 spare) Words

x8 device: (128K + 4K spare) Bytes

x16 device: (64K + 2K spare) Words

Random access: 25µs (max)

Sequential access: 50ns (min)

Page program time: 300µs (typ)

Fast page copy without external

buffering

Internal Cache Register to improve the

program and read throughputs

Block erase time: 2ms (typ)

for simple interface with microcontroller

2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

= 1.7 to 1.95V

= 2.7 to 3.6V

Rev 4.0

ECOPACK

Development tools

Serial Number option

Data protection

–

Data integrity

–

Hardware and Software Block Locking

Hardware Program/Erase locked during

Power transitions

100,000 Program/Erase cycles

10 years Data Retention

Error Correction Code software and

hardware models

Bad Blocks Management and Wear

Leveling algorithms

File System OS Native reference

software

Hardware simulation models

TFBGA63 9.5 x 12 x 1.2mm

VFBGA63 9.5 x 12 x 1mm

TSOP48 12 x 20mm

packages

FBGA

NAND01G-B

NAND02G-B

1 Gbit, 2 Gbit,

www.st.com

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