CY7C09159AV-12AC Cypress Semiconductor Corp, CY7C09159AV-12AC Datasheet

IC SRAM 72KBIT 12NS 100LQFP

CY7C09159AV-12AC

Manufacturer Part Number
CY7C09159AV-12AC
Description
IC SRAM 72KBIT 12NS 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C09159AV-12AC

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Synchronous
Memory Size
72K (8K x 9)
Speed
12ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1177

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C09159AV-12AC
Manufacturer:
CYPRESS
Quantity:
150
Part Number:
CY7C09159AV-12AC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C09159AV-12AC
Quantity:
286
Cypress Semiconductor Corporation
Document #: 38-06053 Rev. *A
Features
Notes:
1.
• True Dual-Ported memory cells which allow simulta-
• Two Flow-Through/Pipelined devices
• Three Modes
• Pipelined output mode on both ports allows fast 83-MHz
• 0.35-micron CMOS for optimum speed/power
v
Logic Block Diagram
R/W
OE
CE
CE
FT/Pipe
I/O
A
CLK
ADS
CNTEN
CNTRST
neous access of the same memory location
operation
— 8K x 9 organization (CY7C09159AV)
— 16K x 9 organization (CY7C09169AV)
— Flow-Through
— Pipelined
— Burst
0
A
0L
0L
1L
L
0
A
L
L
L
[1]
12/13L
A
I/O
12
L
L
for 8K; A
L
8L
0
A
13/14
13
for 16K.
For the most recent information, visit the Cypress web site at www.cypress.com
9
0/1
0/1
1
0
1
Counter/
Address
Register
Decode
0
3901 North First Street
Control
I/O
True Dual-Ported
RAM Array
Synchronous Dual Port Static RAM
• High-speed clock to data access 9 and 12 ns (max.)
• 3.3V Low operating power
• Fully synchronous interface for easier operation
• Burst counters increment addresses internally
• Dual Chip Enables for easy depth expansion
• Automatic power-down
• Commercial and industrial temperature ranges
• Available in 100-pin TQFP
Control
— Active = 135 mA (typical)
— Standby = 10 A (typical)
— Shorten cycle times
— Minimize bus noise
— Supported in Flow-Through and Pipelined modes
I/O
San Jose
0
Counter/
Register
Address
Decode
CA 95134
0/1
1
1
0
3.3V 8K/16K x 9
0/1
9
Revised December 27, 2002
CY7C09159AV
CY7C09169AV
13/14
408-943-2600
I/O
A
CNTRST
0
FT/Pipe
CNTEN
0R
[1]
A
ADS
R/W
12/13R
CLK
CE
CE
I/O
OE
0R
1R
8R
R
R
R
R
R
R
R

Related parts for CY7C09159AV-12AC

CY7C09159AV-12AC Summary of contents

Page 1

... Features • True Dual-Ported memory cells which allow simulta- neous access of the same memory location • Two Flow-Through/Pipelined devices — organization (CY7C09159AV) — 16K x 9 organization (CY7C09169AV) • Three Modes — Flow-Through — Pipelined — Burst • Pipelined output mode on both ports allows fast 83-MHz operation • ...

Page 2

... Functional Description The CY7C09159AV and CY7C09169AV are high-speed syn- chronous CMOS 8K and 16K x 9 dual-port static RAMs. Two ports are provided, permitting independent, simultaneous ac- cess for reads and writes to any location in memory. ters on control, address, and data lines allow for minimal set- up and hold times ...

Page 3

... OEL 22 FT/PIPEL Note: 3. This pin is NC for CY7C09159AV. Selection Guide f (MHz) (Pipelined) MAX2 Max Access Time (ns) (Clock to Data, Pipelined) Typical Operating Current I (mA) CC Typical Standby Current for I (mA) (Both Ports TTL Level) SB1 Typical Standby Current for (Both Ports CMOS Level) SB3 Document #: 38-06053 Rev ...

Page 4

... I/O –I Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage ........................................... >2001V Latch-Up Current..................................................... >200 mA Operating Range Range +0.5V CC Commercial +0.5V CC [5] Industrial CY7C09159AV CY7C09169AV AND CE must be asserted MAX. for x9 devices). 8 Ambient Temperature +70 C 3.3V 300 mV – +85 C 3.3V ...

Page 5

... Ind. [6] Com’l. [5] MAX Ind. [6] Com’l. [5] Ind. [6] Com’l. [5] MAX Ind. Description Test Conditions MHz 3.3V CC AND CE 0 CY7C09159AV CY7C09169AV CY7C09159AV CY7C09169AV -9 -12 Min. Typ. Max. Min. Typ. 2.4 2.4 0.4 2.0 2.0 0.8 –10 10 –10 135 230 115 155 ...

Page 6

... AC Test Loads 3. 590 OUTPUT 435 (a) Normal Load (Load 1) Document #: 38-06053 Rev 250 TH OUTPUT 1.4V TH (b) Thévenin Equivalent (Load 1) CY7C09159AV CY7C09169AV 3. 590 OUTPUT 435 (c) Three-State Delay (Load 2) (Used for & t CKLZ OLZ OHZ including scope and jig) Page ...

Page 7

... Data Output Hold After Clock HIGH DC t Clock HIGH to Output High Z CKHZ t Clock HIGH to Output Low Z CKLZ Port to Port Delays t Write Port Clock High to Read Data Delay CWDD t Clock to Clock Set-up Time CCS Document #: 38-06053 Rev. *A CY7C09159AV CY7C09169AV CY7C09159AV -9 -12 Min. Max. Min. Max ...

Page 8

... DC CD1 CYC2 t CL2 A A n+1 t CD2 Q t CKLZ = following the next rising edge of the clock constantly loads the address on the rising edge of the CLK. Numbers are for reference only. IL CY7C09159AV CY7C09169AV n+2 n+3 t CKHZ Q Q n+1 n OHZ OLZ n+2 ...

Page 9

... CWDD Document #: 38-06053 Rev. *A CL2 CD2 HC CD2 [13, 14, 15, 16 MATCH CD1 CWDD . for the left port, which is being written to. IH CY7C09159AV CY7C09169AV CD2 CKHZ CKLZ CD2 CKHZ CKLZ NO NO MATCH t CD1 VALID >maximum specified, then data is not CWDD CCS CKHZ CD2 ...

Page 10

... During “No operation,” data in memory at the selected address may be corrupted and should be rewritten to ensure data integrity. Document #: 38-06053 Rev. *A [10, 17, 18, 19 n+1 n CD2 CKHZ Q n READ NO OPERATION [10, 17, 18, 19 n+1 n+2 n n+2 n+3 t CD2 OHZ READ WRITE . IH CY7C09159AV CY7C09169AV A A n+3 n CKLZ WRITE READ A A n+4 n CKLZ CD2 READ Page CD2 Q n+3 Q n+4 ...

Page 11

... OUT OE Document #: 38-06053 Rev. *A [8, 10, 17, 18, 19 n+1 n CD1 CKHZ NO READ OPERATION [8, 10, 17, 18, 19 n OHZ READ CY7C09159AV CY7C09169AV n+2 n n+2 t CD1 Q n CKLZ DC WRITE READ A A n+3 n CD1 CKLZ DC WRITE READ A n+4 t CD1 A n+5 t CD1 n+4 ...

Page 12

... R/W and CNTRST = Document #: 38-06053 Rev. *A [20] t SAD t SCN t CD2 READ WITH COUNTER [20 n+1 READ WITH COUNTER . IH CY7C09159AV CY7C09169AV t HAD t HCN Q n+1 n+2 COUNTER HOLD READ WITH COUNTER t t SAD HAD t t SCN HCN Q Q n+2 n+3 COUNTER HOLD Q n+3 READ WITH ...

Page 13

... The “Internal Address” is equal to the “External Address” when ADS = V Document #: 38-06053 Rev n n+1 n+1 WRITE WITH WRITE COUNTER COUNTER HOLD . IH and equals the counter output when ADS = V IL CY7C09159AV CY7C09169AV [21, 22 n+2 n n+2 n+3 WRITE WITH COUNTER . IH A n+4 ...

Page 14

... HRST CNTRST t SD DATA IN DATA OUT COUNTER RESET Notes: 23 24. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset. Document #: 38-06053 Rev. *A [10, 17, 23, 24 WRITE READ ADDRESS 0 ADDRESS 0 CY7C09159AV CY7C09169AV n READ READ ADDRESS 1 ADDRESS n Page n ...

Page 15

... CNTRST I/O Mode Reset out( out( out( Increment out(n+ CY7C09159AV CY7C09169AV –I/O Operation 9 [28] Deselected [28] Deselected Write IN [28] Read Outputs Disabled Operation Counter Reset to Address 0 Load Address Load into Counter Hold External Address Blocked—Counter Disabled Counter Enabled—Internal Address Generation ...

Page 16

... Ordering Information 8K x9 3.3V Synchronous Dual-Port SRAM Speed (ns) Ordering Code 9 CY7C09159AV-9AC 12 CY7C09159AV-12AC 16K x9 3.3V Synchronous Dual-Port SRAM Speed (ns) Ordering Code 9 CY7C09169AV-9AC 12 CY7C09169AV-12AC CY7C09169AV-12AI Package Diagram 100-Pin Thin Plastic Quad Flat Pack (TQFP) A100 Document #: 38-06053 Rev. *A © Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product ...

Page 17

... Document Title: CY7C09159AV/CY7C09169AV 3.3V 8K/16K x 9 Synchronous Dual Port SRAM Document Number: 38-06053 Issue REV. ECN NO. Date ** 110205 11/15/01 *A 122303 12/27/02 Document #: 38-06053 Rev. *A Orig. of Change Description of Change SZV Change from Spec number: 38-00839 to 38-06053 RBI Power up requirements added to Maximum Ratings Information ...

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