CY7C09279V-6AXC Cypress Semiconductor Corp, CY7C09279V-6AXC Datasheet - Page 11

• Manufacturer Part Number: CY7C09279V-6AXC
• Description: IC SRAM 512KBIT 6.5NS 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C09279V-6AXC

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 512K (32K x 16)
• Speed: 6.5ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Density: 512Kb
• Access Time (max): 15ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 53MHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 15b
• Package Type: TQFP
• Operating Temp Range: 0C to 70C
• Number Of Ports: 2
• Supply Current: 320mA
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 100
• Word Size: 16b
• Number Of Words: 32K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Document #: 38-06056 Rev. *C
ADDRESS
ADDRESS
DATA
DATA
DATA
DATA
CLK
R/W
CLK
R/W
CE
CE
OUT
CE
CE
OUT
OE
IN
IN
0
1
0
1
t
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t
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SW
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t
SC
SA
SW
SC
SA
Figure 12. Flow Through Read-to-Write-to-Read (OE Controlled)
A
A
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n
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CD1
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CH1
CD1
CH1
Figure 11. Flow Through Read-to-Write-to-Read (OE = V
(continued)
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t
CYC1
CYC1
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t
t
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HW
HC
HA
HW
HC
HA
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CL1
CL1
Q
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DC
Q
n
A
A
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n+1
READ
READ
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CD1
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SD
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OHZ
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CKHZ
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D
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OPERATION
NO
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SD
WRITE
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WRITE
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HD
IL
)
[18, 20, 28, 29]
[18, 20, 27, 28, 29]
CY7C09269V/79V/89V
CY7C09369V/79V/89V
A
A
n+3
n+4
t
t
OE
t
CKLZ
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CKLZ
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CD1
READ
READ
Q
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DC
t
Q
DC
n+3
A
n+4
A
n+4
n+5
Page 11 of 19
t
t
CD1
CD1
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