AT45DB041D-MU-2.5 Atmel, AT45DB041D-MU-2.5 Datasheet - Page 27

• Manufacturer Part Number: AT45DB041D-MU-2.5
• Description: IC FLASH 4MBIT 66MHZ 8MLF
• Manufacturer: Atmel

Specifications of AT45DB041D-MU-2.5

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 4M (2048 pages x 264 bytes)
• Speed: 66MHz
• Interface: SPI, RapidS
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VFQFN, 8-VFQFPN
• Architecture: Sectored
• Interface Type: SPI
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.5 V
• Maximum Operating Current: 15 mA
• Mounting Style: SMD/SMT
• Organization: 64 KB x 8
• Density: 4Mb
• Access Time (max): 8ns
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: MLF
• Program/erase Volt (typ): 2.5 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.5V
• Operating Supply Voltage (max): 3.6V
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

14.2
3595P–DFLASH–09/09
Operation Mode Summary
The commands described previously can be grouped into four different categories to better
describe which commands can be executed at what times.
Group A commands consist of:
Group B commands consist of:
Group C commands consist of:
Group D commands consist of:
If a Group A command is in progress (not fully completed), then another command in Group A,
B, C, or D should not be started. However, during the internally self-timed portion of Group B
commands, any command in Group C can be executed. The Group B commands using buffer 1
should use Group C commands using buffer 2 and vice versa. Finally, during the internally self-
timed portion of a Group D command, only the Status Register Read command should be
executed.
1. Main Memory Page Read
2. Continuous Array Read
3. Read Sector Protection Register
4. Read Sector Lockdown Register
5. Read Security Register
1. Page Erase
2. Block Erase
3. Sector Erase
4. Chip Erase
5. Main Memory Page to Buffer 1 (or 2) Transfer
6. Main Memory Page to Buffer 1 (or 2) Compare
7. Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase
8. Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase
9. Main Memory Page Program through Buffer 1 (or 2)
10. Auto Page Rewrite
1. Buffer 1 (or 2) Read
2. Buffer 1 (or 2) Write
3. Status Register Read
4. Manufacturer and Device ID Read
1. Erase Sector Protection Register
2. Program Sector Protection Register
3. Sector Lockdown
4. Program Security Register
AT45DB041D
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