IS61C1024-15JI ISSI, Integrated Silicon Solution Inc, IS61C1024-15JI Datasheet - Page 7

• Manufacturer Part Number: IS61C1024-15JI
• Description: IC SRAM 1MBIT 15NS 32SOJ
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61C1024-15JI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 15ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-SOJ
• Other names: Q3397131

IS61C1024
IS61C1024L
WRITE CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
2. The internal write time is defined by the overlap of
3. -12 ns device for IS61C1024 only.
4. Tested with
5. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100% tested.
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR028-1K
05/12/99
Symbol Parameter
t
t
t
t
t
t
t
t
t
t
t
output loading specified in Figure 1.
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
WC
SCE
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
1
2
(4)
(5)
(5)
Write Cycle Time
CE1
CE2 to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
WE
Data Setup to Write End
Data Hold from Write End
WE
WE
Pulse Width
LOW to High-Z Output
HIGH to Low-Z Output
OE
to Write End
HIGH.
-12 ns
Min.
12
10
10
10
10
—
0
0
7
0
2
(3)
Max.
CE1
—
—
—
—
—
—
—
—
—
—
7
LOW, CE2 HIGH and
Min.
15
12
12
12
10
—
-15 ns
0
0
8
0
2
(1,2)
(Over Operating Range, Standard and Low Power)
Max.
—
—
—
—
—
—
—
—
—
—
7
WE
LOW. All signals must be in valid states to
Min.
20
15
15
15
12
10
—
0
0
0
2
-20 ns
Max.
10
—
—
—
—
—
—
—
—
—
—
Min.
25
20
20
20
15
12
—
0
0
0
2
-25 ns
ISSI
Max.
—
—
—
—
—
—
—
—
—
12
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
7