CY7C199C-12VI Cypress Semiconductor Corp, CY7C199C-12VI Datasheet - Page 7

• Manufacturer Part Number: CY7C199C-12VI
• Description: IC SRAM 256KBIT 12NS 28SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C199C-12VI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOJ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1568-5

Document #: 38-05408 Rev. *C
Timing Waveforms
Read Cycle No. 2
Write Cycle No. 1 (WE Controlled)
Notes:
12. Address valid prior to or coincident with CE transition LOW.
13. This cycle is WE controlled, OE is HIGH during write.
14. Data In/Out is high impedance if OE = V
15. During this period the I/Os are in output state and input signals should not be applied.
11. This cycle is OE Controlled and WE is HIGH read cycle.
Data In/Out
Data Out
Current
Address
Address
V
WE
OE
CE
CE
OE
CC
[11, 12]
Undefined
see footnotes
I
I
CC
SB
(continued)
High Z
IH
[13, 14, 15]
t
.
t
HZOE
SA
t
LZCE
t
PU
t
AW
t
ACE
t
t
SCE
LZOE
50%
t
DOE
Data-In Valid
t
WC
t
RC
t
t
SD
PWE
Data Valid
t
HD
t
HZOE
t
HA
CY7C199C
50%
t
HZCE
t
PD
Page 7 of 13
High Z