CY7C199C-12ZXC Cypress Semiconductor Corp, CY7C199C-12ZXC Datasheet - Page 4

• Manufacturer Part Number: CY7C199C-12ZXC
• Description: IC SRAM 256KBIT 12NS 28TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C199C-12ZXC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-TSOP I
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05408 Rev. *C
Capacitance
Thermal Resistance
AC Test Loads and Waveforms
Parameter
C
C
Notes:
3. Tested initially and after any design or process change that may affect these parameters.
4. Test Conditions assume a transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V.
output load
IN
OUT
V
Parameter
Θ
Θ
CC
INCLUDING
JA
JC
JIG AND
SCOPE
C1
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
[3]
(a)
Input Capacitance
Output Capacitance
R1
Description
Description
[4]
R2
output load for
V
CC
INCLUDING
Still Air, soldered on a 3 × 4.5
square inch, two–layer printed
circuit board
T
V
JIGAND
SCOPE
A
CC
= 25°C, f = 1 MHz,
Conditions
t
= 5.0V
C2
HZOE,
(b)
Conditions
t
R1
HZCE,
t
HZWE
R2
GND
3.0V
TSOP I
Equivalent to:
≤ 1V/ns
21.94
88.6
ALL – PACKAGES
OUTPUT
10%
Max.
8
8
ALL INPUT PULSES
41.42
90%
SOJ
79
THÉVENIN EQUIVALENT
R
th
CY7C199C
69.33
31.62
DIP
90%
V
Page 4 of 13
T
10%
≤ 1V/ns
°C/W
Unit
Unit
pF