CY7C1049B-15VXC Cypress Semiconductor Corp, CY7C1049B-15VXC Datasheet

IC SRAM 4MBIT 15NS 36SOJ

CY7C1049B-15VXC

Manufacturer Part Number
CY7C1049B-15VXC
Description
IC SRAM 4MBIT 15NS 36SOJ
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1049B-15VXC

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (512K x 8)
Speed
15ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
36-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
428-1779
Cypress Semiconductor Corporation
Document #: 38-05169 Rev. *B
Features
Note:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
• High speed
• Low active power
• Low CMOS standby power (Commercial L version)
• 2.0V Data Retention (400 µW at 2.0V retention)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE and OE features
• Available in Pb-free and non Pb-free 36-Lead (400-Mil)
WE
CE
OE
Logic Block Diagram
— t
— 1320 mW (max.)
— 2.75 mW (max.)
Molded SOJ
A
A
A
A
A
A
A
A
A
A
A
10
0
1
2
3
4
5
6
7
8
9
AA
= 12 ns
INPUT BUFFER
DECODER
COLUMN
512K x 8
ARRAY
POWER
DOWN
198 Champion Court
Functional Description
The CY7C1049B is a high-performance CMOS static RAM
organized as 524,288 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. Writing
to the device is accomplished by taking Chip Enable (CE) and
Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O
through I/O
address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1049B is available in a standard 400-mil-wide
36-pin SOJ package with center power and ground (revolu-
tionary) pinout.
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
0
1
2
3
4
5
6
7
San Jose
7
) is then written into the location specified on the
0
through A
,
512K x 8 Static RAM
Pin Configuration
CA 95134-1709
GND
I/O3
I/O
I/O
V
I/O
WE
CE
CC
A
A
A
A
A
A
A
A
A
A
0
1
2
3
4
0
1
2
5
6
7
8
9
18
Top View
17
18
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
).
[1]
0
SOJ
Revised August 31, 2006
through I/O
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A
A
A
A
OE
I/O
I/O
GND
V
I/O
I/O
A
A
A
A
A
NC
18
17
16
15
CC
14
13
12
11
10
CY7C1049B
7
6
5
4
7
) are placed in a
408-943-2600
0

Related parts for CY7C1049B-15VXC

CY7C1049B-15VXC Summary of contents

Page 1

... For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05169 Rev. *B Functional Description The CY7C1049B is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW ...

Page 2

... MAX > > < MAX , Com’l CC – 0.3V, CC Com’l L > V – 0.3V < 0.3V Ind’l IN CY7C1049B -12 - 240 220 Ambient Temperature 0°C to +70°C 4.5V–5.5V –40°C to +85°C -12 -15 -17 Max. Min. Max. Min. 2.4 2.4 0.4 0 ...

Page 3

... Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05169 Rev. *B Test Conditions T = 25° MHz 5. 481 Ω 5V 3.0V R2 GND 5 pF 255Ω INCLUDING JIG AND SCOPE (b) 1.73V CY7C1049B Max ALL INPUT PULSES 90% 10% ≤ Page Unit pF pF 90% 10% ≤ ...

Page 4

... No input may exceed V + 0.5V. CC Document #: 38-05169 Rev. *B [4] -12 Min. Max. [ Over the Operating Range Com’ > > power is less than less than t , and t HZCE LZCE HZOE LZOE HZWE CY7C1049B -15 -17 Min. Max. Min. Max [11] Conditions Min. Max. ...

Page 5

... Notes: 12. Device is continuously selected HIGH for read cycle. 14. Address valid prior to or coincident with CE transition LOW. Document #: 38-05169 Rev. *B DATA RETENTION MODE 3.0V V > CDR OHA ACE t DOE t LZOE 50 CY7C1049B 3. DATA VALID t HZOE t HZCE IMPEDANCE DATA VALID t PD 50% HIGH Page ...

Page 6

... If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. 17. During this period the I/Os are in the output state and input signals should not be applied. Document #: 38-05169 Rev SCE SCE PWE t SD DATA VALID [15, 16 SCE PWE t SD DATA VALID IN CY7C1049B Page ...

Page 7

... Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS NOTE 17 DATA I/O Ordering Information Speed (ns) Ordering Code 12 CY7C1049B-12VC CY7C1049B-12VXC 15 CY7C1049B-15VC CY7C1049B-15VXC CY7C1049B-15VI CY7C1049B-15VXI 17 CY7C1049BL-17VC Document #: 38-05169 Rev. *B [16 SCE PWE t HZWE Package Name 51-85090 36-Lead (400-Mil) Molded SOJ 36-Lead (400-Mil) Molded SOJ (Pb-free) ...

Page 8

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C1049B 51-85090-*B ...

Page 9

... Document History Page Document Title: CY7C1049B 512K x 8 Static RAM Document Number: 38-05169 Issue REV. ECN NO. Date ** 110209 12/02/01 *A 116465 09/16/02 *B 498501 See ECN Document #: 38-05169 Rev. *B Orig. of Change SZV Change from Spec number: 38-00937 to 38-05169 CEA Add applications foot note to data sheet, page 1 ...

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