CY7C09199V-12AXC Cypress Semiconductor Corp, CY7C09199V-12AXC Datasheet - Page 8

• Manufacturer Part Number: CY7C09199V-12AXC
• Description: IC SRAM 1.152MBIT 12NS 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C09199V-12AXC

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 1.152M (128K x 9)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-06043 Rev. *C
Switching Waveforms
Notes
16. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge.
17. ADS = V
18. The output is disabled (high-impedance state) by CE
19. Addresses do not have to be accessed sequentially since ADS = V
only.
ADDRESS
DATA
IL
CLK
R/W
CE
CE
OUT
, CNTEN and CNTRST = V
OE
0
1
t
t
t
SC
SW
SA
Figure 6. Read Cycle for Flow-Through Output (FT/PIPE = V
A
n
(continued)
t
t
t
t
HC
HW
HA
CH1
t
IH
CKLZ
.
t
CD1
t
CYC1
t
0
CL1
=V
IH
A
or CE
n+1
1
t
Q
DC
IL
= V
n
constantly loads the address on the rising edge of the CLK. Numbers are for reference
IL
following the next rising edge of the clock.
A
n+2
Q
t
OHZ
n+1
IL
)
[16, 17, 18, 19]
t
t
OE
SC
t
OLZ
CY7C09079V/89V/99V
CY7C09179V/89V/99V
A
n+3
Q
t
DC
n+2
t
HC
t
CKHZ
Page 8 of 21
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