CY7C199C-12VXCT Cypress Semiconductor Corp, CY7C199C-12VXCT Datasheet - Page 5

• Manufacturer Part Number: CY7C199C-12VXCT
• Description: IC SRAM 256KBIT 12NS 28SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C199C-12VXCT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05408 Rev. *B
DC Electrical Characteristics
Capacitance
AC Test Loads
I
I
I
C
C
SB2
OZ
IX
Parameter
IN
OUT
Parameter
Output
AC Test Conditions
C1
C2
R1
R2
R3
R4
R
V
Note:
Thevenin Equivalent
[3]
3. Tested initially and after any design or process change that may affect these parameters.
TH
TH
Automatic CE
Power-down Current
CMOS Inputs
Output Leakage
Current
Input Load Current
Input Capacitance
Output Capacitance
Parameter
Description
V
Description
CC
R
Output Loads
th
C1
(A)*
Capacitor 1
Capacitor 2
Resistor 1
Resistor 2
Resistor 3
Resistor 4
Resistor Thevenin
Voltage Thevenin
V
Over the Operating Range (–20, –25)
R1
T
Max. V
– 0.3V, or V
GND ≤ Vi ≤ V
GND ≤ Vi ≤ V
T
V
A
CC
= 25°C, f = 1 MHz,
R2
Conditions
= 5.0V
CC
* including scope and jig capacitance
, CE ≥ V
V
V
Description
CC
SS
IN
Condition
CC
CC
≤ 0.3V, f = 0
, Output Disabled
10%
CC
– 0.3V, V
Rise Time
1 V/ns
90%
IN
≥ V
CC
[2]
All Input Pulses
Output
(continued)
V
Power
CC
ALL – PACKAGES
–
L
–
–
for t
Output Loads
Nom.
HZOE
1.73
480
255
480
255
167
30
Max.
5
C2
8
8
, t
(B)*
Min. Max. Min. Max.
HZCE
–5
–5
–
–
20 ns
& t
R3
HZW E
Fall Time
1 V/ns
500
10
+5
+5
90%
R4
Unit
–5
–5
pF
CY7C199C
Ω
–
–
V
10%
25 ns
500
Page 5 of 13
+5
+5
10
Unit
mA
Unit
µA
µA
µA
pF