M25P128-VME6TG NUMONYX, M25P128-VME6TG Datasheet - Page 37

• Manufacturer Part Number: M25P128-VME6TG
• Description: IC FLASH 128MBIT 50MHZ 8VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P128-VME6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VDFPN EP
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P128-VME6TGCT

Table 15.
1. 65 nm process technology devices are identified by the process identification digit ‘A’ in the device marking
2. t
3. Value is guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for WRSR instruction when SRWD is set to 1.
6. V
t
VPPHSL
t
Symbol
t
t
t
t
SHWL
HHQX
WHSL
SHQZ
HLQZ
t
t
t
t
t
t
t
t
t
t
and process letter "B" in the part number.
(success or failure) is known.
t
t
DVCH
CHDX
CHSH
SHCH
CHHH
HHCH
CH
CLQV
CLQX
HLCH
CHHL
SHSL
PP
t
t
t
t
PPH
(6)
t
SE
SE
BE
BE
W
(7)
and t
(3)
(2)
(3)
(5)
(5)
should be kept at a valid level until the program or erase operation has completed and its result
(3)
CL
must be greater than or equal to 1/f
AC characteristics for 65 nm devices
t
t
Alt.
t
t
DSU
t
CSH
t
t
DIS
DH
HO
t
HZ
LZ
V
Data In Setup Time
Data In Hold Time
S Active Hold Time (relative to C)
S Not Active Setup Time (relative to C)
S Deselect Time
Output Disable Time
Clock Low to Output Valid
Output Hold Time
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect Setup Time
Write Protect Hold Time
Enhanced Program Supply Voltage
High to Chip Select Low
Write Status Register Cycle Time
Page Program Cycle Time (256 Bytes)
Page Program Cycle Time (n Bytes)
Page Program Cycle Time (V
V
Sector Erase Cycle Time
Sector Erase Cycle Time (V
Bulk Erase Cycle Time
Bulk Erase Cycle Time (V
PPH
Test conditions specified in
) (256 Bytes)
Parameter
C
(max).
PP
PP
= V
PP
= V
Table 11
PPH
=
PPH
)
(1)
)
(continued)
and
Min.
100
200
50
20
2
3
4
4
1
4
4
4
4
Table 12
int(n/8) x
0.015
0.4
Typ.
130
120
1.3
0.5
1.6
1.6
(3)
(8)
Max.
250
250
15
8
8
8
8
5
3
3
Unit
ms
37/47
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s
s
s
s