NAND01GW3B2BZA6E NUMONYX, NAND01GW3B2BZA6E Datasheet - Page 48

• Manufacturer Part Number: NAND01GW3B2BZA6E
• Description: IC FLASH 1GBIT 63VFBGA
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2BZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

DC and AC parameters
Figure 21. Data Input Latch AC waveforms
1. Data in last is 2112 in x8 devices and 1056 in x16 devices.
Figure 22. Sequential data output after read AC waveforms
1. CL = Low, AL = Low, W = High.
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I/O
CL
AL
W
E
RB
I/O
E
R
(ALSetup time)
tALLWH
tBHRL
(R Accesstime)
tWLWH
tRLQV
(Data Setup time)
tDVWH
(Read Cycle time)
Data Out
tRHRL
(R High Holdtime)
tWLWL
Data In 0
tRLRL
tRLQV
(Data Hold time)
tDVWH
tWHDX
tWLWH
tRHQZ
Data Out
Data In 1
tDVWH
tWHDX
Data In
NAND01G-B2B, NAND02G-B2C
Last
tEHQZ
Data Out
tRLQV
tWLWH
tWHDX
(E Hold time)
tWHEH
tRHQZ
(CL Hold time)
tWHCLH
ai13107
ai08031