MCP14700-E/MF Microchip Technology, MCP14700-E/MF Datasheet - Page 14

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MCP14700-E/MF

Manufacturer Part Number
MCP14700-E/MF
Description
IC MOSFET DRIVER HIGH/LOW 8DFN
Manufacturer
Microchip Technology
Type
High and Low Side Gate Driverr
Datasheet

Specifications of MCP14700-E/MF

Package / Case
8-DFN
Configuration
High and Low Side, Synchronous
Input Type
Non-Inverting
Delay Time
27ns
Current - Peak
2A
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
36V
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Product
MOSFET Gate Drivers
Rise Time
10 ns
Fall Time
10 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Supply Current
80 uA
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Maximum Turn-off Delay Time
36 ns
Maximum Turn-on Delay Time
36 ns
Minimum Operating Temperature
- 40 C
Number Of Drivers
Single
Output Current
2000 mA
Output Voltage
0.025 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP14700-E/MF
Manufacturer:
MICROCHIP
Quantity:
1 200
MCP14700
5.4
Proper PCB layout is important in a high current, fast
switching circuit to provide proper device operation.
Improper component placement may cause errant
switching, excessive voltage ringing, or circuit latch-up.
There are two important states of the MCP14700
outputs, high and low.
flow paths when the outputs of the MCP14700 are high
and the power MOSFETs are turned on. The charge
needed to turn on the low-side power MOSFET comes
from the decoupling capacitor C
from this capacitor through the internal LOWDR
circuitry, into the gate of the low-side power MOSFET,
out the source, into the ground plane, and back to
C
the inductance and area of this current loop must be
minimized.
FIGURE 5-1:
The charge needed to turn on the high-side power
MOSFET comes from the bootstrap capacitor C
Current flows from C
HIGHDR circuitry, into the gate of the high-side power
MOSFET, out the source and back to C
printed circuit board traces that construct this current
loop need to have a small area and low inductance. To
control the inductance, short and wide traces must be
used.
DS22201A-page 14
VCC
PWM
PWM
V
C
CC
VCC
. To reduce any excess voltage ringing or spiking,
HI
LO
PCB Layout
MCP14700
Turn On Current Paths.
C
Figure 5-1
BOOT
BOOT
VCC
through the internal
depicts the current
. The current flows
V
BOOT
SUPPLY
. The
BOOT
.
Figure 5-2
outputs of the MCP14700 are low and the power
MOSFETs are turned off. These current paths should
also have low inductance and a small loop area to
minimize the voltage ringing and spiking.
FIGURE 5-2:
The following recommendations should be followed for
optimal circuit performance:
- The components that construct the high
- A ground plane should be used to keep both
PWM
PWM
V
C
CC
current paths previously mentioned should be
placed close the MCP14700 device. The
traces used to construct these current loops
should be wide and short to keep the
inductance and impedance low.
the parasitic inductance and impedance
minimized. The MCP14700 device is capable
of sourcing and sinking high peaks current
and any extra parasitic inductance or
impedance will result in non-optimal
performance.
VCC
HI
LO
depicts the current flow paths when the
MCP14700
Turn Off Current Paths.
C
© 2009 Microchip Technology Inc.
BOOT
V
SUPPLY

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