VN750S-E STMicroelectronics, VN750S-E Datasheet - Page 16

• Manufacturer Part Number: VN750S-E
• Description: IC DRIVER HIGH SIDE 8-SOIC
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN750S-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 60 mOhm
• Current - Peak Output: 6A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Supply Voltage (min): 5.5 V
• Supply Current: 3.5 mA
• Maximum Power Dissipation: 4200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 30000 ns
• Maximum Turn-on Delay Time: 40000 ns
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 6A
• Output Resistance: 0.06ohm
• Input Delay: 40µs
• Output Delay: 30µs
• Supply Voltage Range: 5.5V To 36V
• Driver Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical specifications
2.5
16/27
Figure 24. Application schematic
GND protection network against reverse battery
Solution 1: resistor in the ground line (R
The following is an indication on how to dimension the R
1.
2.
where -I
maximum rating section of the device datasheet.
Power dissipation in R
P
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
values. This shift varies depending on how many devices are on in the case of several high
side drivers sharing the same R
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize solution 2 (see below).
Solution 2: diode (D
parallel to D
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (≈600mV) in the input threshold
D
GND
= (-V
R
R
produces a shift (I
GND
GND
+5V
μC
CC
GND
)
≤ 600 mV / (I
≥ (−V
2
GND
/R
is the DC reverse ground pin current and can be found in the absolute
GND
CC
if the device drives an inductive load.
R
R
prot
prot
) / (-I
GND
GND
GND
+5V
) in the ground line A resistor (R
S(on)max
S(on)max
(when V
)
STATUS
INPUT
Doc ID 17010 Rev 1
).
GND
* R
CC
.
GND
<0: during reverse battery situations) is:
GND
) in the input thresholds and the status output
only). This can be used with any type of load.
V
GND
GND
R
GND
GND
GND
S(on)max
V
CC
=1 kΩ) should be inserted in
resistor.
D
GND
becomes the sum of the
OUTPUT
VN750S-E
D
ld