VN750S-E STMicroelectronics, VN750S-E Datasheet - Page 19

• Manufacturer Part Number: VN750S-E
• Description: IC DRIVER HIGH SIDE 8-SOIC
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN750S-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 60 mOhm
• Current - Peak Output: 6A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Supply Voltage (min): 5.5 V
• Supply Current: 3.5 mA
• Maximum Power Dissipation: 4200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 30000 ns
• Maximum Turn-on Delay Time: 40000 ns
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 6A
• Output Resistance: 0.06ohm
• Input Delay: 40µs
• Output Delay: 30µs
• Supply Voltage Range: 5.5V To 36V
• Driver Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VN750S-E
2.9
Note:
SO-8 maximum demagnetization energy (V
Figure 26. SO-8 maximum turn-off current versus inductance
Values are generated with R
demagnetization) of every pulse must not exceed the temperature specified above for
curves A and B.
I
V
LMAX (A)
IN
, I
A: T
B: T
C: T
L
100
jstart
jstart
jstart
10
1
0.1
= 150 °C single pulse
= 100 °C repetitive pulse
= 125 °C repetitive pulse
Demagnetization
L
=0
Doc ID 17010 Rev 1
W
.In case of repetitive pulses, T
1
L(mH)
Demagnetization
C
10
B
A
CC
jstart
Electrical specifications
= 13.5 V)
(at beginning of each
Demagnetization
100
19/27
t